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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

IEEE electron device letters, 1988-04, Vol.9 (4), p.165-167

1988

Volltextzugriff (PDF)

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1537-1544

1999

Volltextzugriff (PDF)

SiGe-channel heterojunction p-MOSFET's

IEEE transactions on electron devices, 1994-01, Vol.41 (1), p.90-101

1994

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Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1503-1509

1989

Volltextzugriff (PDF)

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n+-p junctions

IEEE transactions on electron devices, 1985-09, Vol.32 (9), p.1766-1770

1985

Volltextzugriff (PDF)

Heterojunction bipolar transistors using Si-Ge alloys

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2043-2064

1989

Volltextzugriff (PDF)

Technology leverage for ultra-low power information systems

Proceedings of the IEEE, 1995-04, Vol.83 (4), p.607-618

Stork, J.M.C.

1995

Volltextzugriff (PDF)

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.542-556

1993

Volltextzugriff (PDF)

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.525-541

1993

Volltextzugriff (PDF)

Characterization of non-ohmic behavior of emitter contacts of bipolar transistors

IEEE electron device letters, 1984-07, Vol.5 (7), p.221-223

1984

Volltextzugriff (PDF)

An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

IEEE electron device letters, 1994-11, Vol.15 (11), p.472-474

1994

Volltextzugriff (PDF)

The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1537-1544

1999

Volltextzugriff (PDF)

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

1987 International Electron Devices Meeting, 1987, p.874-876

1987

Volltextzugriff (PDF)

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

IEEE electron device letters, 1992-05, Vol.13 (5), p.259-261

1992

Volltextzugriff (PDF)

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

IEEE electron device letters, 1993-02, Vol.14 (2), p.69-71

1993

Volltextzugriff (PDF)

Technology leverage for ultra-low power information systems

Proceedings of 1994 IEEE Symposium on Low Power Electronics, 1994, p.52-55

Stork, J.M.C.

1994

Volltextzugriff (PDF)

Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

IEEE electron device letters, 1989-12, Vol.10 (12), p.534-536

1989

Volltextzugriff (PDF)

Current gain rolloff in graded-base SiGe heterojunction bipolar transistors

IEEE electron device letters, 1993-04, Vol.14 (4), p.193-195

1993

Volltextzugriff (PDF)

High-low polysilicon-emitter SiGe-base bipolar transistors

IEEE electron device letters, 1993-10, Vol.14 (10), p.478-480

1993

Volltextzugriff (PDF)

Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design

IEEE electron device letters, 1989-04, Vol.10 (4), p.156-158

1989

Volltextzugriff (PDF)

On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits

IEEE journal of solid-state circuits, 1992-02, Vol.27 (2), p.225-228

1992

Volltextzugriff (PDF)

Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.166-168

1991

Volltextzugriff (PDF)

Low-temperature operation of SiGe p-n-p HBTs

IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2638-2639

1992

Volltextzugriff (PDF)

Tunneling in base-emitter junctions

IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1527-1534

1983

Volltextzugriff (PDF)

Bipolar transistor scaling for minimum switching delay and energy dissipation

Technical Digest., International Electron Devices Meeting, 1988, p.550-553

Stork, J.M.C.

1988

Volltextzugriff (PDF)

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

SiGe-channel heterojunction p-MOSFET's

Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n+-p junctions

Heterojunction bipolar transistors using Si-Ge alloys

Technology leverage for ultra-low power information systems

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

Characterization of non-ohmic behavior of emitter contacts of bipolar transistors

An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Technology leverage for ultra-low power information systems

Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

Current gain rolloff in graded-base SiGe heterojunction bipolar transistors

High-low polysilicon-emitter SiGe-base bipolar transistors

Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design

On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits

Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

Low-temperature operation of SiGe p-n-p HBTs

Tunneling in base-emitter junctions

Bipolar transistor scaling for minimum switching delay and energy dissipation

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