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SiGe-channel heterojunction p-MOSFET's

IEEE transactions on electron devices, 1994-01, Vol.41 (1), p.90-101

1994

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IEEE_Xplore

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1537-1544

1999

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

IEEE electron device letters, 1988-04, Vol.9 (4), p.165-167

1988

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IEEE_Xplore

High-mobility modulation-doped graded SiGe-channel p-MOSFET's

IEEE electron device letters, 1991-08, Vol.12 (8), p.447-449

1991

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An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

IEEE electron device letters, 1994-11, Vol.15 (11), p.472-474

1994

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IEEE_Xplore

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

IEEE electron device letters, 1992-05, Vol.13 (5), p.259-261

1992

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IEEE_Xplore

High-low polysilicon-emitter SiGe-base bipolar transistors

IEEE electron device letters, 1993-10, Vol.14 (10), p.478-480

1993

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IEEE_Xplore

Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

IEEE electron device letters, 1989-12, Vol.10 (12), p.534-536

1989

Link zum Volltext
IEEE_Xplore

UHVCVD growth of Si/SiGe heterostructures and their applications

Semiconductor science and technology, 1994-11, Vol.9 (11S), p.2005-2010

1994

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Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design

IEEE electron device letters, 1989-04, Vol.10 (4), p.156-158

1989

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IEEE_Xplore

Heterojunction bipolar transistors using Si-Ge alloys

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2043-2064

1989

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IEEE_Xplore

Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.166-168

1991

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IEEE_Xplore

Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1503-1509

1989

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IEEE_Xplore

75-GHz fT SiGe-base heterojunction bipolar transistors

IEEE electron device letters, 1990-04, Vol.11 (4), p.171-173

1990

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Partial-SOI isolation structure for reduced bipolar transistor parasitics

IEEE electron device letters, 1992-08, Vol.13 (8), p.424-426

1992

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IEEE_Xplore

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.542-556

1993

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IEEE_Xplore

Tunneling in base-emitter junctions

IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1527-1534

1983

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IEEE_Xplore

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.378-385

1991

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IEEE_Xplore

Design considerations of high-performance narrow-emitter bipolar transistors

IEEE electron device letters, 1987-04, Vol.8 (4), p.174-175

1987

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IEEE_Xplore

Technology leverage for ultra-low power information systems: Low-power electronics

Proceedings of the IEEE, 1995, Vol.83 (4), p.607-618

STORK, J. M. C

1995

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Characterization of non-ohmic behavior of emitter contacts of bipolar transistors

IEEE electron device letters, 1984-07, Vol.5 (7), p.221-223

1984

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IEEE_Xplore

Non-ideal base current in bipolar transistors at low temperatures

IEEE transactions on electron devices, 1987-01, Vol.34 (1), p.130-138

1987

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IEEE_Xplore

Bipolar transistor with self-aligned lateral profile

IEEE electron device letters, 1987-08, Vol.8 (8), p.338-340

1987

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IEEE_Xplore

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

IEEE electron device letters, 1993-02, Vol.14 (2), p.69-71

1993

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IEEE_Xplore

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

IEEE electron device letters, 1990-07, Vol.11 (7), p.288-290

1990

Link zum Volltext
IEEE_Xplore

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SiGe-channel heterojunction p-MOSFET's

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

High-mobility modulation-doped graded SiGe-channel p-MOSFET's

An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

High-low polysilicon-emitter SiGe-base bipolar transistors

Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

UHVCVD growth of Si/SiGe heterostructures and their applications

Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design

Heterojunction bipolar transistors using Si-Ge alloys

Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

75-GHz fT SiGe-base heterojunction bipolar transistors

Partial-SOI isolation structure for reduced bipolar transistor parasitics

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

Tunneling in base-emitter junctions

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

Design considerations of high-performance narrow-emitter bipolar transistors

Technology leverage for ultra-low power information systems: Low-power electronics

Characterization of non-ohmic behavior of emitter contacts of bipolar transistors

Non-ideal base current in bipolar transistors at low temperatures

Bipolar transistor with self-aligned lateral profile

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

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