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The Measuring Ammonia in Nature (MAN) network in the Netherlands

Biogeosciences, 2015-08, Vol.12 (16), p.5133-5142

2015

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Transient enhanced diffusion of boron in Si

Journal of applied physics, 2002-06, Vol.91 (11), p.8919-8941

2002

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Energetics of Self-Interstitial Clusters in Si

Physical review letters, 1999-05, Vol.82 (22), p.4460-4463

1999

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Implantation and transient B diffusion in Si: The source of the interstitials

Applied physics letters, 1994-10, Vol.65 (18), p.2305-2307

1994

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Applied physics letters, 1995-03, Vol.66 (11), p.1370-1372

1995

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Modeling statistical dopant fluctuations in MOS transistors

IEEE transactions on electron devices, 1998-09, Vol.45 (9), p.1960-1971

1998

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Applied physics letters, 1995-01, Vol.66 (5), p.568-570

1995

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Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

Journal of applied physics, 1994-06, Vol.75 (11), p.7266-7286

1994

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

Applied physics letters, 2001-02, Vol.78 (7), p.889-891

2001

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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Flat band voltage shift and oxide properties after rapid thermal annealing

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1053-1056

2001

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Performance of the MAN ammonia monitoring network in the Netherlands

Atmospheric environment (1994), 2020-05, Vol.228, p.117400, Article 117400

2020

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Formation of extended defects in silicon by high energy implantation of B and P

Journal of applied physics, 1996-08, Vol.80 (4), p.2105-2112

1996

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The mechanism of iron gettering in boron-doped silicon

Applied physics letters, 1996-01, Vol.68 (1), p.51-53

1996

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Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

Applied physics letters, 1996-08, Vol.69 (9), p.1211-1213

1996

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The Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation

Journal of the Electrochemical Society, 1996-04, Vol.143 (4), p.1406-1409

1996

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The effect of carbon on diffusion in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-01, Vol.36 (1-3), p.275-281

1996

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Structural and electrical defects in amorphous silicon probed by positrons and electrons

Journal of applied physics, 1992-12, Vol.72 (11), p.5145-5152

1992

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High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.848-855

2000

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Defects in amorphous silicon probed by subpicosecond photocarrier dynamics

Applied physics letters, 1992-04, Vol.60 (14), p.1688-1690

1992

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Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix

Journal of applied physics, 1990-05, Vol.67 (9), p.4024-4035

1990

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Applied physics letters, 1996-09, Vol.69 (10), p.1376-1378

1996

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The Measuring Ammonia in Nature (MAN) network in the Netherlands

Transient enhanced diffusion of boron in Si

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Energetics of Self-Interstitial Clusters in Si

Implantation and transient B diffusion in Si: The source of the interstitials

Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Modeling statistical dopant fluctuations in MOS transistors

The interstitial fraction of diffusivity of common dopants in Si

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

Iron gettering mechanisms in silicon

Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

Transient enhanced diffusion of Sb and B due to MeV silicon implants

Flat band voltage shift and oxide properties after rapid thermal annealing

Performance of the MAN ammonia monitoring network in the Netherlands

Formation of extended defects in silicon by high energy implantation of B and P

The mechanism of iron gettering in boron-doped silicon

Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

The Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation

The effect of carbon on diffusion in silicon

Structural and electrical defects in amorphous silicon probed by positrons and electrons

High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

Defects in amorphous silicon probed by subpicosecond photocarrier dynamics

Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

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