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Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures

Applied physics letters, 2020-10, Vol.117 (17)

2020

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Persistent conductive footprints of 109° domain walls in bismuth ferrite films

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

IEEE electron device letters, 2023-04, Vol.44 (4), p.678-681

2023

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Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

Nature materials, 2008-06, Vol.7 (6), p.464-467

2008

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Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

Journal of applied physics, 2001-08, Vol.90 (3), p.1387-1402

2001

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Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Applied physics letters, 2013-11, Vol.103 (22), p.222902

2013

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Non-volatile polarization switch of magnetic domain wall velocity

Applied physics letters, 2015-12, Vol.107 (25)

2015

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Injection-controlled size effect on switching of ferroelectric thin films

Applied physics letters, 1999-03, Vol.74 (9), p.1326-1328

1999

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Magnetic domain wall propagation under ferroelectric control

Physical review. B, Condensed matter and materials physics, 2012-12, Vol.86 (23), Article 235130

2012

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Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Ferroelectric polymer gate on AlGaN∕GaN heterostructures

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films

Journal of applied physics, 1998-09, Vol.84 (6), p.3216-3225

1998

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Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Nanotechnology, 2011-06, Vol.22 (25), p.254004-254004

2011

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Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Journal of applied physics, 2005-10, Vol.98 (8), p.084106-084106-7

2005

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Top-interface-controlled switching and fatigue endurance of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors

Applied physics letters, 1999-06, Vol.74 (23), p.3552-3554

1999

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Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Ferroelectrics, 2011-01, Vol.421 (1), p.98-102

2011

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Downscaling of Pb(Zr,Ti)O3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Journal of applied physics, 2000-08, Vol.88 (4), p.2154-2156

2000

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Ferroelectric Gates with Rewritable Domain Nanopatterns for Modulation of Transport Properties in GaN/AlGaN Heterostructures

Physics of Semiconductors; Part B, 2005, Vol.772, p.1585-1586

2005

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Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Ferroelectric polymer gate on Al Ga N ∕ Ga N heterostructures

Journal of applied physics, 2007-12, Vol.102 (11), p.114101-114101-4

2007

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Cold-field-emission test of the fatigued state of Pb(ZrxTi1−x)O3films

Applied physics letters, 1998-09, Vol.73 (10), p.1361-1363

1998

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Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films

Applied physics letters, 2003-10, Vol.83 (16), p.3362-3364

2003

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Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Applied physics letters, 2009-02, Vol.94 (6)

2009

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Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

Applied physics letters, 2003-03, Vol.82 (10), p.1604-1606

2003

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Control of leakage conduction of high-fatigue-endurance (Pb, La)(Zr, Ti)O3 film ferroelectric capacitors with Pt/SrRuO3 electrodes

Applied physics letters, 1999-09, Vol.75 (12), p.1790-1792

1999

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Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures

Persistent conductive footprints of 109° domain walls in bismuth ferrite films

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Non-volatile polarization switch of magnetic domain wall velocity

Injection-controlled size effect on switching of ferroelectric thin films

Magnetic domain wall propagation under ferroelectric control

Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

Ferroelectric polymer gate on AlGaN∕GaN heterostructures

Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Top-interface-controlled switching and fatigue endurance of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Downscaling of Pb(Zr,Ti)O3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Ferroelectric Gates with Rewritable Domain Nanopatterns for Modulation of Transport Properties in GaN/AlGaN Heterostructures

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Ferroelectric polymer gate on Al Ga N ∕ Ga N heterostructures

Cold-field-emission test of the fatigued state of Pb(ZrxTi1−x)O3films

Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

Control of leakage conduction of high-fatigue-endurance (Pb, La)(Zr, Ti)O3 film ferroelectric capacitors with Pt/SrRuO3 electrodes

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