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Effect on birth outcomes of a formalised approach to care in hospital labour assessment units: international, randomised controlled trial

BMJ, 2008-09, Vol.337 (aug28 1), p.a1021-a1021

International edition, 2008

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Central nervous system myelin of teleosts: comparative electrophoretic analysis of its proteins by staining and immunoblotting

Comparative biochemistry and physiology. B, Comparative biochemistry, 1986, Vol.84 (3), p.273-278

1986

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EFFECT OF REPEATED IRRADIATION WITH LOW POWER HELIUM-NEON LASER ON ACUTE HERPETIC PAIN

Anesthesia and analgesia, 1998-02, Vol.86 (2S), p.317

1998

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Immunological evidence for the presence of myelin-related integral proteins in the CNS of hagfish and lamprey

Neurochemical research, 1987-10, Vol.12 (10), p.869-873

1987

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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Applied physics letters, 2017-06, Vol.110 (24)

2017

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On the origin of interface states at oxide/III-nitride heterojunction interfaces

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot

Applied physics letters, 2021-05, Vol.118 (21)

2021

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

physica status solidi (b), 2015-05, Vol.252 (5), p.996-1000

2015

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Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Journal of applied physics, 2016-05, Vol.119 (20)

2016

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Mg Doping of N-Polar, In-Rich InAlN

Materials, 2023-03, Vol.16 (6), p.2250

2023

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Applied physics letters, 2008-09, Vol.93 (12), p.124103

2008

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied physics letters, 2009-06, Vol.94 (22), p.223512-223512-3

2009

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Biodegradability of soluble organic matter in maize-cropped soils

Geoderma, 2003-05, Vol.113 (3), p.237-252

2003

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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Semiconductor science and technology, 2017-02, Vol.32 (2), p.25017

2017

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Electron transport properties in thin InN layers grown on InAlN

Materials science in semiconductor processing, 2023-03, Vol.155, p.107250, Article 107250

2023

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GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials, 2021-06, Vol.14 (13), p.3461

2021

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Semiconductor science and technology, 2017-03, Vol.32 (4)

2017

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Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2365-2371

2021

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Growth and Properties of N‐Polar InN/InAlN Heterostructures

Physica status solidi. A, Applications and materials science, 2020-10, Vol.217 (19), p.n/a

2020

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied physics letters, 2007-03, Vol.90 (12)

2007

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High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Applied surface science, 2021-02, Vol.538, p.147936, Article 147936

2021

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Effect of temperature and carrier gas on the properties of thick I n x A l 1 - x N layer

Applied surface science, 2019-03, Vol.470, p.1-7

2019

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Effect on birth outcomes of a formalised approach to care in hospital labour assessment units: international, randomised controlled trial

Central nervous system myelin of teleosts: comparative electrophoretic analysis of its proteins by staining and immunoblotting

EFFECT OF REPEATED IRRADIATION WITH LOW POWER HELIUM-NEON LASER ON ACUTE HERPETIC PAIN

Immunological evidence for the presence of myelin-related integral proteins in the CNS of hagfish and lamprey

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

On the origin of interface states at oxide/III-nitride heterojunction interfaces

InN/InAlN heterostructures for new generation of fast electronics

Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot

InN: Breaking the limits of solid-state electronics

Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Mg Doping of N-Polar, In-Rich InAlN

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Biodegradability of soluble organic matter in maize-cropped soils

Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Electron transport properties in thin InN layers grown on InAlN

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels

Growth and Properties of N‐Polar InN/InAlN Heterostructures

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Effect of temperature and carrier gas on the properties of thick I n x A l 1 - x N layer

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