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Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

IEEE electron device letters, 2002-09, Vol.23 (9), p.535-537

2002

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Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes

Solid-state electronics, 2002-08, Vol.46 (8), p.1235-1239

2002

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Integration of CdSe quantum dots with GaN optoelectronic materials

Physica status solidi. C, 2005-05, Vol.2 (7), p.2924-2927

2005

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Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs

ECS journal of solid state science and technology, 2015-01, Vol.4 (2), p.R10-R13

2015

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Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al x Ga1−x N Using Dichlorofluoromethane (Halocarbon 12)

Journal of electronic materials, 2007-09, Vol.36 (9), p.1166-1173

2007

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Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD

ECS transactions, 2016, Vol.72 (5), p.41-45

2016

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Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

Solid-state electronics, 2002-12, Vol.46 (12), p.2291-2294

2002

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Measurement of the N-->Delta(+)(1232) transition at high-momentum transfer by pi(0) electroproduction

Physical review letters, 2006-09, Vol.97 (11), p.112003-112003

2006

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Surface Energy Modification as a Means of Promoting Nanoparitcle-Substrate Electronic Couping

ECS transactions, 2012-04, Vol.45 (5), p.83-88

2012

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Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20<x<0.52)

Applied physics letters, 2009-09, Vol.95 (13)

2009

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Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped Al x Ga 1 − x N ( 0.20 < x < 0.52 )

Applied physics letters, 2009-09, Vol.95 (13), p.131102-131102-3

2009

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Effect of Barrier Growth Temperature on the Material Properties of InGaN/GaN Multiple Quantum Well Structures

ECS journal of solid state science and technology, 2013, Vol.2 (12), p.R267-R272

2013

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Effect of O Impurity on the Properties of InGaN/GaN Multiple Quantum Well and Light Emitting Diode Structures

ECS transactions, 2014, Vol.61 (4), p.337-341

2014

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(Invited) Study of Carrier Localization, Carrier Transportation and Carrier Recombination Processes in Blue-Emitting InGaN/GaN MQWs

ECS transactions, 2014, Vol.61 (4), p.295-303

2014

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Superatmospheric MOCVD Growth of Bulk InGaN for Template and Optoelectronic Applications

ECS transactions, 2014, Vol.61 (4), p.235-241

2014

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Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition

ECS transactions, 2013, Vol.53 (2), p.31-38

2013

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Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements

ECS transactions, 2014, Vol.61 (4), p.257-263

2014

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Effect of Growth Pressure and Gas-Phase Chemistry on the Optical Quality of InGaN/GaN Multi-Quantum Wells

MRS proceedings, 2013, Vol.1538 (1), p.341-351

2013

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Superatmospheric MOCVD Reactor Design for High Quality InGaN Growth

ECS transactions, 2012, Vol.45 (7), p.73-77

2012

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Confocal Microscopy and TRPL Spectroscopy Study on Spatial Variation of PL in Blue-Emitting InGaN/GaN MQWs

ECS transactions, 2013, Vol.53 (2), p.43-51

2013

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PL Spatial Variation in InGaN/GaN MQWs Studied by Confocal Microscopy and TRPL Spectroscopy

ECS journal of solid state science and technology, 2013, Vol.2 (11), p.R262-R266

2013

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GaN/Quantum Dots/GaN Wafer Bonded Structure: Thiophenethiol Capped CdSe/ZnS Quantum Dots as Active Layer and Binding Layer

ECS transactions, 2011, Vol.35 (18), p.81-87

2011

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Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes

MRS proceedings, 2002, Vol.722, Article K2.3

2002

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Evanescent wave immunoprobe with high bivalent antibody activity

Biosensors & bioelectronics, 1995, Vol.10 (5), p.423-434

1995

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Assembly of CdSeS(ZnS) Quantum Dots in Langmuir Films with Tertiary Alkyl Phosphine Ligands

ECS transactions, 2009, Vol.16 (25), p.155-162

2009

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Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes

Integration of CdSe quantum dots with GaN optoelectronic materials

Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs

Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al x Ga1−x N Using Dichlorofluoromethane (Halocarbon 12)

Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD

Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

Measurement of the N-->Delta(+)(1232) transition at high-momentum transfer by pi(0) electroproduction

Surface Energy Modification as a Means of Promoting Nanoparitcle-Substrate Electronic Couping

Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20<x<0.52)

Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped Al x Ga 1 − x N ( 0.20 < x < 0.52 )

Effect of Barrier Growth Temperature on the Material Properties of InGaN/GaN Multiple Quantum Well Structures

Effect of O Impurity on the Properties of InGaN/GaN Multiple Quantum Well and Light Emitting Diode Structures

(Invited) Study of Carrier Localization, Carrier Transportation and Carrier Recombination Processes in Blue-Emitting InGaN/GaN MQWs

Superatmospheric MOCVD Growth of Bulk InGaN for Template and Optoelectronic Applications

Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition

Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements

Effect of Growth Pressure and Gas-Phase Chemistry on the Optical Quality of InGaN/GaN Multi-Quantum Wells

Superatmospheric MOCVD Reactor Design for High Quality InGaN Growth

Confocal Microscopy and TRPL Spectroscopy Study on Spatial Variation of PL in Blue-Emitting InGaN/GaN MQWs

PL Spatial Variation in InGaN/GaN MQWs Studied by Confocal Microscopy and TRPL Spectroscopy

GaN/Quantum Dots/GaN Wafer Bonded Structure: Thiophenethiol Capped CdSe/ZnS Quantum Dots as Active Layer and Binding Layer

Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes

Evanescent wave immunoprobe with high bivalent antibody activity

Assembly of CdSeS(ZnS) Quantum Dots in Langmuir Films with Tertiary Alkyl Phosphine Ligands

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