UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

IEEE electron device letters, 2017-01, Vol.38 (1), p.99-102

2017

Volltextzugriff (PDF)

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE electron device letters, 2017-12, Vol.38 (12), p.1696-1699

2017

Volltextzugriff (PDF)

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

IEEE electron device letters, 2012-05, Vol.33 (5), p.667-669

2012

Volltextzugriff (PDF)

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1838-1842

2018

Volltextzugriff (PDF)

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

IEEE electron device letters, 2014-10, Vol.35 (10), p.1004-1006

2014

Volltextzugriff (PDF)

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

IEEE electron device letters, 2018-07, Vol.39 (7), p.999-1002

2018

Volltextzugriff (PDF)

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2416-2422

2015

Volltextzugriff (PDF)

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

Volltextzugriff (PDF)

Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.79-86

2018

Volltextzugriff (PDF)

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1122-1129

2015

Volltextzugriff (PDF)

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.862-865

2014

Volltextzugriff (PDF)

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2232-2236

2014

Volltextzugriff (PDF)

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

IEEE electron device letters, 2019-04, Vol.40 (4), p.518-521

2019

Volltextzugriff (PDF)

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF07-4

2015

Volltextzugriff (PDF)

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

Volltextzugriff (PDF)

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2765-2770

2018

Volltextzugriff (PDF)

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

IEEE electron device letters, 2016-04, Vol.37 (4), p.474-477

2016

Volltextzugriff (PDF)

On the Identification of Buffer Trapping for Bias-Dependent Dynamic R} of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

IEEE electron device letters, 2016-03, Vol.37 (3), p.310-313

2016

Volltextzugriff (PDF)

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3616-3621

2017

Volltextzugriff (PDF)

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2199-2207

2014

Volltextzugriff (PDF)

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.997-1004

2016

Volltextzugriff (PDF)

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.216-221

2021

Volltextzugriff (PDF)

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1853-1860

2016

Volltextzugriff (PDF)

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.419-422

2019

Volltextzugriff (PDF)

Experimental Benchmarking of Electrical Methods and \mu -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2321-2327

2016

Volltextzugriff (PDF)

1 – 25 von 81

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(57)
Mit Volltextzugriff
(73)

Publikationsform

Sprache

Englisch
(81)

Erscheinungsjahr

n.n

Thema

Science & Technology
(62)
Technology
(52)
Engineering
(50)
Engineering, Electrical & Electronic
(49)
Physical Sciences
(34)
Physics
(34)
Physics, Applied
(34)
Gallium Nitride
(31)
Logic Gates
(30)
Aluminum Gallium Nitride
(28)
Wide Band Gap Semiconductors
(18)
Aluminum Gallium Nitrides
(17)
Hemts
(17)
Stress
(16)
Degradation
(14)
Leakage Currents
(12)
Gallium Nitrides
(11)
High Electron Mobility Transistors
(11)
Schottky Diodes
(11)
Transistors
(11)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

On the Identification of Buffer Trapping for Bias-Dependent Dynamic R} of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

Experimental Benchmarking of Electrical Methods and \mu -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

Suchergebnisse filtern