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Empirical research on teaching and learning of mathematical modelling : a survey on the current state-of-the-art

ZDM, 2018-04, Vol.50 (1), p.5-18

2018

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Enhanced tracheostomy wound healing using maltodextrin and silver alginate compounds in pediatrics: a pilot study

Respiratory care, 2014-12, Vol.59 (12), p.1857-1862

2014

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Sawdust Empire, Sawdust Mountain, and Beyond: The Challenges for the State of Jefferson, as Seen Through the Photographs of Eirik Johnson’s Sawdust Mountain

Humboldt journal of social relations, 2022-11, Vol.1 (36), p.34-58

2022

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High reliability InGaP/GaAs HBT

IEEE electron device letters, 1998-04, Vol.19 (4), p.115-117

1998

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Growth of carbon-doped p-type InxGa1-xAs (0 < x ≤ 0.53) by metalorganic chemical vapor deposition

Applied physics letters, 1992-06, Vol.60 (23), p.2903-2905

1992

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Trends in teaching and learning of mathematical modelling: ICTMA 14

9789400709102

2011

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Carbon diffusion in undoped, n-type, and p-type GaAs

Applied physics letters, 1989-08, Vol.55 (7), p.687-689

1989

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Activation studies of low-dose Si implants in gallium nitride

Applied physics letters, 1998-12, Vol.73 (26), p.3875-3877

1998

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Sawdust Empire, Sawdust Mountain, and Beyond: The Challenges for the State of Jefferson, as Seen Through the Photographs of Eirik Johnson'sSawdust Mountain

Humboldt journal of social relations, 2014, Vol.36, p.34-58

2014

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Democracy Despite Government: African American Parading and Democratic Theory

New political science, 2010-12, Vol.32 (4), p.485-499

2010

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Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Applied physics letters, 1989-05, Vol.54 (19), p.1905-1907

1989

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Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

Applied physics letters, 1990-01, Vol.56 (4), p.361-363

1990

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Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

Journal of electronic materials, 2000-01, Vol.29 (1), p.75-79

2000

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Can Modelling Be Taught and Learnt? Some Answers from Empirical Research

Trends in Teaching and Learning of Mathematical Modelling, p.15-30

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Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.634-640

1999

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Be diffusion in InGaAs/InP heterojunction bipolar transistors

IEEE electron device letters, 2000-07, Vol.21 (7), p.332-334

2000

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High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

IEEE electron device letters, 1995-12, Vol.16 (12), p.540-541

1995

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Ansel Adams : 400 photographs

Stillman, Andrea G

2007

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The Prison City of New Orleans: Law's Responses to the Disaster of Hurricane Katrina

Sociology of crime, law, and deviance, 2012, Vol.17, p.203-225

2012

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Comparison of In0.5Ga0.5P/GaAs single and double-heterojunction bipolar transistors with a carbon-doped base

IEEE electron device letters, 1993, Vol.14 (1), p.25-28

1993

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Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Journal of applied physics, 1992-08, Vol.72 (3), p.981-987

1992

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Sub-Gap Excited Photoluminescence in III-V Compound Semiconductor Heterostructures

physica status solidi (b), 2000-09, Vol.221 (1), p.517-522

2000

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Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

Applied physics letters, 1996-02, Vol.68 (7), p.982-984

1996

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Applying Metacognitive Knowledge and Strategies in Applications and Modelling Tasks at Secondary School

Trends in Teaching and Learning of Mathematical Modelling, p.165-180

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Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

Applied physics letters, 1999-05, Vol.74 (20), p.2993-2995

1999

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Empirical research on teaching and learning of mathematical modelling : a survey on the current state-of-the-art

Enhanced tracheostomy wound healing using maltodextrin and silver alginate compounds in pediatrics: a pilot study

Sawdust Empire, Sawdust Mountain, and Beyond: The Challenges for the State of Jefferson, as Seen Through the Photographs of Eirik Johnson’s Sawdust Mountain

High reliability InGaP/GaAs HBT

Growth of carbon-doped p-type InxGa1-xAs (0 < x ≤ 0.53) by metalorganic chemical vapor deposition

Trends in teaching and learning of mathematical modelling: ICTMA 14

Carbon diffusion in undoped, n-type, and p-type GaAs

Activation studies of low-dose Si implants in gallium nitride

Sawdust Empire, Sawdust Mountain, and Beyond: The Challenges for the State of Jefferson, as Seen Through the Photographs of Eirik Johnson'sSawdust Mountain

Democracy Despite Government: African American Parading and Democratic Theory

Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

Can Modelling Be Taught and Learnt? Some Answers from Empirical Research

Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

Be diffusion in InGaAs/InP heterojunction bipolar transistors

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

Ansel Adams : 400 photographs

The Prison City of New Orleans: Law's Responses to the Disaster of Hurricane Katrina

Comparison of In0.5Ga0.5P/GaAs single and double-heterojunction bipolar transistors with a carbon-doped base

Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Sub-Gap Excited Photoluminescence in III-V Compound Semiconductor Heterostructures

Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

Applying Metacognitive Knowledge and Strategies in Applications and Modelling Tasks at Secondary School

Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

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