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Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1427-1432

2019

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Electron-Induced Single-Event Upsets in Static Random Access Memory

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4122-4129

2013

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28

2020

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.256-261

2018

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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The relationships among environmental allergen sensitization, allergen exposure, pulmonary function, and bronchial hyperresponsiveness in the Childhood Asthma Management Program

Journal of allergy and clinical immunology, 1999-10, Vol.104 (4), p.775-785

1999

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Effects of technology scaling on the SET sensitivity of RF CMOS Voltage-controlled oscillators

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2426-2432

2005

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A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

IEEE transactions on nuclear science, 2019-03, Vol.66 (3), p.635-642

2019

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The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.326-330

2018

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3253-3258

2006

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Crosstalk Effects Caused by Single Event Hits in Deep Sub-Micron CMOS Technologies

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3306-3311

2006

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Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.486-494

2018

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A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3152-3157

2009

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Single-Event Sensitivity and Hardening of a Pipelined Analog-to-Digital Converter

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3532-3538

2006

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Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.384-388

2019

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Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.311-317

2018

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Single-event mitigation in combinational logic using targeted data path hardening

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2516-2523

2005

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Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.382-387

2017

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Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL)

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.512-518

2017

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Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3163-3170

2014

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Dynamic changes in hydraulic conductivity in petioles of two savanna tree species: factors and mechanisms contributing to the refilling of embolized vessels

Plant, cell and environment, 2003-10, Vol.26 (10), p.1633-1645

2003

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System-level design hardening based on worst-case ASET Simulations

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2787-2793

2004

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Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3037-3042

2014

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Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2584-2589

2007

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Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

Electron-Induced Single-Event Upsets in Static Random Access Memory

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

The relationships among environmental allergen sensitization, allergen exposure, pulmonary function, and bronchial hyperresponsiveness in the Childhood Asthma Management Program

Effects of technology scaling on the SET sensitivity of RF CMOS Voltage-controlled oscillators

A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

Crosstalk Effects Caused by Single Event Hits in Deep Sub-Micron CMOS Technologies

Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

Single-Event Sensitivity and Hardening of a Pipelined Analog-to-Digital Converter

Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations

Single-event mitigation in combinational logic using targeted data path hardening

Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL)

Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators

Dynamic changes in hydraulic conductivity in petioles of two savanna tree species: factors and mechanisms contributing to the refilling of embolized vessels

System-level design hardening based on worst-case ASET Simulations

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

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