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Numerical simulation of the Ge28Sb12Se60 fiber extrusion process

Journal of the American Ceramic Society, 2024-07, Vol.107 (7), p.4501-4511

2024

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Adhesion of Ge20SE80 Glass to Silica Glass, Stainless Steel with Nitrided and Non-Nitrided Surface, and Tungsten Carbide

Glass and ceramics, 2024, Vol.81 (3-4), p.140-144

2024

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Adhesion Strength of the Interface between Solid Phases in the GaxGe40–xS60–Quartz Glass System

Inorganic materials, 2023-02, Vol.59 (2), p.185-190

2023

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Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Inorganic materials, 2016-12, Vol.52 (12), p.1210-1214

2016

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Effect of eddy formation on gas mixture homogeneity near a substrate in a vertical reactor for CdHgTe deposition

Inorganic materials, 2016-02, Vol.52 (2), p.194-200

2016

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Numerical simulation of the Ge 28 Sb 12 Se 60 fiber extrusion process

Journal of the American Ceramic Society, 2024-07, Vol.107 (7), p.4501-4511

2024

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Transparent IR glass ceramics: Requirements for the dispersed structure and for the methods of its control

Journal of the European Ceramic Society, 2021-12, Vol.41 (15), p.7852-7861

2021

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Preparation and properties of especially pure Ge-Sb-As-S glasses for IR optics

Journal of non-crystalline solids, 2024-10, Vol.642, p.123158, Article 123158

2024

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Mid-IR fiber-optic sensors based on especially pure Ge20Se80 and Ga10Ge15Te73I2 glasses

Journal of non-crystalline solids, 2022-03, Vol.579, p.121374, Article 121374

2022

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Development of As-Se tapered suspended-core fibers for ultra-broadband mid-IR wavelength conversion

Journal of non-crystalline solids, 2018-01, Vol.480, p.43-50

2018

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Preparation of high-purity chalcogenide glasses containing gallium(III) sulfide

Journal of non-crystalline solids, 2022-10, Vol.593, p.121786, Article 121786

2022

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Wettability of stainless steel with a Ge28Sb12Se60 glass melt and its contact adhesion strength

Journal of non-crystalline solids, 2022-02, Vol.578, p.121351, Article 121351

2022

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Phase formation during crystallization of melts and glasses of the GaxGe40-xS60 system

Journal of non-crystalline solids, 2023-12, Vol.622, p.122686, Article 122686

2023

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Peculiarities of GaxGe100-x-ySey glasses crystallization as potential materials for optical IR glass-ceramics

Journal of non-crystalline solids, 2021-10, Vol.570, Article 121018

2021

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Optical fibers based on special pure Ge20Se80 and Ge26As17Se25Te32 glasses for FEWS

Journal of non-crystalline solids, 2019-08, Vol.517, p.70-75

2019

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The Ga20Ge20Se60 glass-ceramics as a promising long-wave IR optical material

Journal of non-crystalline solids, 2022-08, Vol.590, p.121700, Article 121700

2022

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Special pure germanium-rich Ga-Ge-As-Se glasses for active mid-IR fiber optics

Materials research bulletin, 2018-11, Vol.107, p.430-437

2018

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Effect of Ge-rich Ga-Ge-Sb-Se glass composition on the optical and thermal properties

Optical materials, 2020-06, Vol.104, p.109943, Article 109943

2020

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Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.702-707

2018

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Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6)

2018

Volltextzugriff (PDF)

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.702-707

2018

Volltextzugriff (PDF)

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – x Cd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (6), p.702-707

2018

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Effect of silver and sodium ions on the refractive index and structure of TeO2-WO3-La2O3 glasses

Inorganic materials, 2015-08, Vol.51 (8), p.811-815

2015

Volltextzugriff (PDF)

Solid-state field-assisted silver diffusion in (TeO2)0.6(WO3)0.25(La2O3)0.05(Na2O)0.1 glass

Inorganic materials, 2012-06, Vol.48 (6), p.642-647

2012

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Interpretation of data on the total scattering cross section of cold neutrons in condensed hydrogen-containing media

Soviet Atomic Energy, 1979-03, Vol.46 (3), p.224-226

1979

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1 – 25 von 2.243

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Numerical simulation of the Ge28Sb12Se60 fiber extrusion process

Adhesion of Ge20SE80 Glass to Silica Glass, Stainless Steel with Nitrided and Non-Nitrided Surface, and Tungsten Carbide

Adhesion Strength of the Interface between Solid Phases in the GaxGe40–xS60–Quartz Glass System

Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Effect of eddy formation on gas mixture homogeneity near a substrate in a vertical reactor for CdHgTe deposition

Numerical simulation of the Ge 28 Sb 12 Se 60 fiber extrusion process

Transparent IR glass ceramics: Requirements for the dispersed structure and for the methods of its control

Preparation and properties of especially pure Ge-Sb-As-S glasses for IR optics

Mid-IR fiber-optic sensors based on especially pure Ge20Se80 and Ga10Ge15Te73I2 glasses

Development of As-Se tapered suspended-core fibers for ultra-broadband mid-IR wavelength conversion

Preparation of high-purity chalcogenide glasses containing gallium(III) sulfide

Wettability of stainless steel with a Ge28Sb12Se60 glass melt and its contact adhesion strength

Phase formation during crystallization of melts and glasses of the GaxGe40-xS60 system

Peculiarities of GaxGe100-x-ySey glasses crystallization as potential materials for optical IR glass-ceramics

Optical fibers based on special pure Ge20Se80 and Ge26As17Se25Te32 glasses for FEWS

The Ga20Ge20Se60 glass-ceramics as a promising long-wave IR optical material

Special pure germanium-rich Ga-Ge-As-Se glasses for active mid-IR fiber optics

Effect of Ge-rich Ga-Ge-Sb-Se glass composition on the optical and thermal properties

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – x Cd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Effect of silver and sodium ions on the refractive index and structure of TeO2-WO3-La2O3 glasses

Solid-state field-assisted silver diffusion in (TeO2)0.6(WO3)0.25(La2O3)0.05(Na2O)0.1 glass

Interpretation of data on the total scattering cross section of cold neutrons in condensed hydrogen-containing media

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