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Comparative theoretical and experimental studies of two designs of high-power diode lasers

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45010

2014

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Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions

Optics express, 2013-02, Vol.21 (3), p.2777-2786

2013

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Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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High-power 808 nm lasers with a super-large optical cavity

Semiconductor science and technology, 2005-06, Vol.20 (6), p.621-624

2005

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5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

IEEE photonics technology letters, 2008-04, Vol.20 (8), p.575-577

2008

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Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1223-1227

2005

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3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1188-1193

2007

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MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

Journal of crystal growth, 2007, Vol.298, p.652-657

2007

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12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

Applied physics letters, 2001-09, Vol.79 (13), p.1965-1967

2001

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High-power high-efficiency 1150-nm quantum-well laser

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1217-1222

2005

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650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

IEEE photonics technology letters, 2007-01, Vol.19 (2), p.118-120

2007

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5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers

IEEE photonics technology letters, 2006-09, Vol.18 (18), p.1955-1957

2006

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High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

IEEE journal of selected topics in quantum electronics, 2001-03, Vol.7 (2), p.334-339

2001

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High-power 980 nm quantum dot broad area lasers

Electronics letters, 2003-11, Vol.39 (23), p.1655

2003

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High-power diode lasers with small vertical beam divergence emitting at 808 nm

Electronics letters, 2001-08, Vol.37 (16), p.1024-1026

2001

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Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Physica status solidi. C, 2006-03, Vol.3 (3), p.423-426

2006

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Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-$\mu$m Stripe Width

IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1378-1380

2008

Volltextzugriff (PDF)

High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs

Electronics letters, 1999, Vol.35 (19), p.1641-1643

1999

Volltextzugriff (PDF)

55 W peak power from 1100 nm wavelength 60 mum broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035020 (5)-035020 (5)

2009

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55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035020

2009

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55 W peak power from 1100 nm wavelength 60 μm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

Semiconductor science and technology, 2009, Vol.24 (3)

2009

Volltextzugriff (PDF)

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100- \mum Stripe Width

IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1378-1380

2008

Volltextzugriff (PDF)

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-[Formula Omitted]m Stripe Width

IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1378-1380

2008

Volltextzugriff (PDF)

Fluorescence of Sm3+ in Sm/Cu-codoped (Li2B4O7)1-x(WO3)x glasses

Journal of luminescence, 1993-05, Vol.55 (3), p.115-123

1993

Volltextzugriff (PDF)

Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25°C

Electronics letters, 2005-03, Vol.41 (5), p.1

2005

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Comparative theoretical and experimental studies of two designs of high-power diode lasers

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions

Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications

High-power 808 nm lasers with a super-large optical cavity

5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

High-power high-efficiency 1150-nm quantum-well laser

650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers

High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

High-power 980 nm quantum dot broad area lasers

High-power diode lasers with small vertical beam divergence emitting at 808 nm

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-$\mu$m Stripe Width

High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs

55 W peak power from 1100 nm wavelength 60 mum broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

55 W peak power from 1100 nm wavelength 60 μm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100- \mum Stripe Width

Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-[Formula Omitted]m Stripe Width

Fluorescence of Sm3+ in Sm/Cu-codoped (Li2B4O7)1-x(WO3)x glasses

Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25°C

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