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Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell

Physical review letters, 2006-12, Vol.97 (24), p.247701-247701, Article 247701

2006

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Coherent manipulation of semiconductor quantum bits with terahertz radiation

Nature (London), 2001-03, Vol.410 (6824), p.60-63

2001

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A Planar Gunn Diode Operating Above 100 GHz

IEEE electron device letters, 2007-10, Vol.28 (10), p.849-851

2007

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Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Solar energy materials and solar cells, 2013-01, Vol.108, p.175-179

2013

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Enhanced third-order nonlinear effects in optical AlGaAs nanowires

Optics express, 2006-10, Vol.14 (20), p.9377-9384

2006

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Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

Journal of applied physics, 2010-09, Vol.108 (6), p.064513-064513-7

2010

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A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

Applied physics. A, Materials science & processing, 2009-06, Vol.95 (3), p.713-720

2009

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Emitter degradation in quantum dot intermediate band solar cells

Applied physics letters, 2007-06, Vol.90 (23), p.233510-233510-3

2007

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Elements of the design and analysis of quantum-dot intermediate band solar cells

Thin solid films, 2008-08, Vol.516 (20), p.6716-6722

2008

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Interactions of discrete solitons with structural defects

Optics letters, 2003-05, Vol.28 (10), p.834

2003

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Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

Solar energy materials and solar cells, 2015-09, Vol.140, p.299-305

2015

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3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

Scripta materialia, 2015-07, Vol.103, p.73-76

2015

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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

Acta materialia, 2016-01, Vol.103, p.651-657

2016

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Understanding the operation of quantum dot intermediate band solar cells

Journal of applied physics, 2012-02, Vol.111 (4), p.044502-044502-12

2012

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Characteristics of GdGaO grown by MBE

Microelectronic engineering, 2009-03, Vol.86 (3), p.244-248

2009

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High-resolution photocurrent spectroscopy of the positive trion state in a single quantum dot

Physical review. B, Condensed matter and materials physics, 2013-04, Vol.87 (15), Article 155315

2013

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Quasi phase matching in GaAs–AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing

Optics letters, 2000-09, Vol.25 (18), p.1370

2000

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A universal damage induced technique for quantum well intermixing

Applied physics letters, 1998-02, Vol.72 (5), p.581-583

1998

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Application of photoreflectance to advanced multilayer structures for photovoltaics

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-05, Vol.178 (9), p.599-608

2013

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Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAs

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (3), Article 035302

2005

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Advances in understanding the Kombolgie Subgroup and unconformity-related uranium deposits in the Alligator Rivers Uranium Field and how to explore for them using lithogeochemical principles

Australian journal of earth sciences, 2011-07, Vol.58 (5), p.453-474

2011

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Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell

Thin solid films, 2008-08, Vol.516 (20), p.6919-6923

2008

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Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin

Physica status solidi. A, Applications and materials science, 2006-02, Vol.203 (3), p.628-637

2006

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Verification of polarization selection rules and implementation of selective coherent manipulations of hydrogenic transitions in n-GaAs

Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (20), p.201201.1-201201.4, Article 201201

2005

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Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

Thin solid films, 2008-08, Vol.516 (20), p.6943-6947

2008

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Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell

Coherent manipulation of semiconductor quantum bits with terahertz radiation

A Planar Gunn Diode Operating Above 100 GHz

Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Enhanced third-order nonlinear effects in optical AlGaAs nanowires

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

Emitter degradation in quantum dot intermediate band solar cells

Elements of the design and analysis of quantum-dot intermediate band solar cells

Interactions of discrete solitons with structural defects

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

Understanding the operation of quantum dot intermediate band solar cells

Characteristics of GdGaO grown by MBE

High-resolution photocurrent spectroscopy of the positive trion state in a single quantum dot

Quasi phase matching in GaAs–AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing

A universal damage induced technique for quantum well intermixing

Application of photoreflectance to advanced multilayer structures for photovoltaics

Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAs

Advances in understanding the Kombolgie Subgroup and unconformity-related uranium deposits in the Alligator Rivers Uranium Field and how to explore for them using lithogeochemical principles

Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell

Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin

Verification of polarization selection rules and implementation of selective coherent manipulations of hydrogenic transitions in n-GaAs

Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

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