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High-mobility modulation-doped graded SiGe-channel p-MOSFET's

IEEE electron device letters, 1991-08, Vol.12 (8), p.447-449

1991

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The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

Journal of applied physics, 1991-08, Vol.70 (3), p.1416-1420

1991

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Partial-SOI isolation structure for reduced bipolar transistor parasitics

IEEE electron device letters, 1992-08, Vol.13 (8), p.424-426

1992

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Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

Journal of physical chemistry (1952), 1996-02, Vol.100 (8), p.3144-3149

1996

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Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

IEEE electron device letters, 1990-07, Vol.11 (7), p.288-290

1990

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Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.378-385

1991

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Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

IEEE transactions on electron devices, 1992-06, Vol.39 (6), p.1477-1489

1992

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A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization

IEEE transactions on electron devices, 1994-08, Vol.41 (8), p.1379-1387

1994

Volltextzugriff (PDF)

High-performance emitter-up/down SiGe HBT's

IEEE electron device letters, 1994-09, Vol.15 (9), p.360-362

1994

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The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I: Theory

Journal of applied physics, 1992-05, Vol.71 (10), p.4814-4819

1992

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Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells

Physical review. B, Condensed matter, 1993-10, Vol.48 (16), p.11946-11959

1993

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Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

Microelectronic engineering, 1991-10, Vol.15 (1-4), p.11-14

1991

Volltextzugriff (PDF)

The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films

Journal of applied physics, 1992-05, Vol.71 (10), p.4820-4825

1992

Volltextzugriff (PDF)

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)

IEEE electron device letters, 1991-12, Vol.12 (12), p.679-681

1991

Volltextzugriff (PDF)

The role of dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II: Experiment : the high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin film

Journal of applied physics, 1992, Vol.71 (10), p.4820-4825

1992

Volltextzugriff (PDF)

Identification of perimeter depletion and emitter plug effects in deep-submincroemter, shallow-junction polysilicon emitter bipolar transistors

IEEE transactions on electron devices, 1992, Vol.39 (6), p.1477-1489

1992

Volltextzugriff (PDF)

Erratum: The thermal stability of SiGe films deposited by ultrahigh vacuum chemical vapor deposition [J. Appl. Phys. 70 , 1416 (1991)]

Journal of applied physics, 1991-12, Vol.70 (11), p.7194-7194

1991

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Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures

Applied physics letters, 1995-11, Vol.67 (21), p.3156-3158

1995

Volltextzugriff (PDF)

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

MRS proceedings, 1992, Vol.280, Article 471

1992

Volltextzugriff (PDF)

High-mobility modulation-doped SiGe-channel p-MOSFETs

IEEE electron device letters, 1991-08, Vol.12 (8), p.447-449

1991

Volltextzugriff (PDF)

Novel in-situ doped polysilicon emitter process with buried diffusion sources (BDS)

IEEE electron device letters, 1991, Vol.12 (12), p.679-681

1991

Volltextzugriff (PDF)

Device design issues for a high-performance technology with Si or SiGe epitaxial base

Microelectronic engineering, 1991, Vol.15 (1), p.11-14

1991

Volltextzugriff (PDF)

SPIRIT - A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI

Symposium 1993 on VLSI Technology, 1993, p.143-144

1993

Volltextzugriff (PDF)

A SiGe-base PNP ECL circuit technology

Symposium 1993 on VLSI Technology, 1993, p.61-62

1993

Volltextzugriff (PDF)

Device Design Issues for a High-Performance Bipolar Technology with Si or SiGe Epitaxial Base

ESSDERC '91: 21st European Solid State Device Research Conference, 1991, p.11-14

1991

Volltextzugriff (PDF)

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High-mobility modulation-doped graded SiGe-channel p-MOSFET's

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

Partial-SOI isolation structure for reduced bipolar transistor parasitics

Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization

High-performance emitter-up/down SiGe HBT's

The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I: Theory

Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)

The role of dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II: Experiment : the high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin film

Identification of perimeter depletion and emitter plug effects in deep-submincroemter, shallow-junction polysilicon emitter bipolar transistors

Erratum: The thermal stability of SiGe films deposited by ultrahigh vacuum chemical vapor deposition [J. Appl. Phys. 70 , 1416 (1991)]

Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

High-mobility modulation-doped SiGe-channel p-MOSFETs

Novel in-situ doped polysilicon emitter process with buried diffusion sources (BDS)

Device design issues for a high-performance technology with Si or SiGe epitaxial base

SPIRIT - A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI

A SiGe-base PNP ECL circuit technology

Device Design Issues for a High-Performance Bipolar Technology with Si or SiGe Epitaxial Base

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