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Predicting the solar probe plus solar array output

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.2155-2160

2014

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High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications

Integrated ferroelectrics, 1997-09, Vol.17 (1-4), p.127-139

1997

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Array-design considerations for the Solar Probe Plus mission

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.003696-003702

2011

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Novel 600 V GaN Schottky diode delivering SiC performance at Si prices

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005, 2005, Vol.1, p.311-314 Vol. 1

2005

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Microstructure and properties of PbZr1-xTixO3 thin films made by one and two step metalorganic chemical vapor deposition

Integrated ferroelectrics, 1997-09, Vol.18 (1-4), p.155-169

1997

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Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor

MRS proceedings, 1999, Vol.572, Article 173

1999

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Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.222-227

1997

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The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor

Materials science forum, 2000-05, Vol.338-342, p.157-160

2000

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High dielectric constant Ba x Sr 1-x TiO 3 (BST) thin films made by mocvd techniques for dram applications

Integrated ferroelectrics, 1997-09, Vol.17 (1-4), p.127-139

1997

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1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical, 2002, p.TuH3-TuH3

2002

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Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

MRS proceedings, 1989, Vol.145, Article 253

1989

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The BCL-6 proto-oncogene controls germinal-centre formation and Th2-type inflammation

Nature genetics, 1997-06, Vol.16 (2), p.161-170

1997

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A Network-Individual-Resource Model for HIV Prevention

AIDS and behavior, 2010-12, Vol.14 (Suppl 2), p.204-221

2010

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Predicting the solar probe plus solar array output

High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications

Array-design considerations for the Solar Probe Plus mission

Novel 600 V GaN Schottky diode delivering SiC performance at Si prices

Microstructure and properties of PbZr1-xTixO3 thin films made by one and two step metalorganic chemical vapor deposition

Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor

High dielectric constant Ba x Sr 1-x TiO 3 (BST) thin films made by mocvd techniques for dram applications

1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

The BCL-6 proto-oncogene controls germinal-centre formation and Th2-type inflammation

A Network-Individual-Resource Model for HIV Prevention

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