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Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N

Solid state communications, 1997-08, Vol.103 (5), p.273-278

1997

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High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127, p.467-470

1997

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Ion implantation doping and isolation of GaN

Applied physics letters, 1995-09, Vol.67 (10), p.1435-1437

1995

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Ca and O ion implantation doping of GaN

Applied physics letters, 1996-04, Vol.68 (14), p.1945-1947

1996

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Ion-implanted GaN junction field effect transistor

Applied physics letters, 1996-04, Vol.68 (16), p.2273-2275

1996

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Annealing of ion implanted gallium nitride

Applied physics letters, 1998-03, Vol.72 (10), p.1190-1192

1998

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A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Journal of crystal growth, 1988, Vol.93 (1-4), p.220-227

1988

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Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

Electronics letters, 1980-01, Vol.16 (5), p.171-172

1980

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Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Journal of electronic materials, 1997-03, Vol.26 (3), p.243-251

1997

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A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

Materials letters, 1985-01, Vol.3 (9), p.325-330

1985

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The scaling of CVD rotating disk reactors to large sizes and comparison with theory

Journal of electronic materials, 1996-09, Vol.25 (9), p.1487-1494

1996

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Novel 600 V GaN Schottky diode delivering SiC performance at Si prices

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005, 2005, Vol.1, p.311-314 Vol. 1

2005

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Optical Properties of In{sub x}Ga{sub 1-x}N Alloys Grown by Metalorganic Chemical Vapor Deposition

Journal of applied physics, 1997-12, Vol.84 (8)

1997

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Recessed gate GaN field effect transistor

Solid-state electronics, 1997-11, Vol.41 (11), p.1819-1820

1997

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Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin solid films, 1998-02, Vol.313 (1-2), p.187-192

1998

Volltextzugriff (PDF)

Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga 0.95Al 0.05N

Solid state communications, 1997, Vol.103 (5), p.273-278

1997

Volltextzugriff (PDF)

Large scale manufacturing of compound semiconductors by MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.92-96

1997

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Near-band-edge Photoluminescence Emission in Al{sub x}Ga{sub 1-x}N under High Pressure

Applied physics letters, 1997-12, Vol.72 (18)

1997

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Edge-Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Physica status solidi. C, 2003 (1), p.524-527

2003

Volltextzugriff (PDF)

Optical Properties of GaN Films Grown on SiC/Si

Materials science forum, 1998-01, Vol.264-268, p.1149-1152

1998

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Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors

Journal of crystal growth, 1994-12, Vol.145 (1), p.642-649

1994

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Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE

Journal of crystal growth, 1992-11, Vol.124 (1), p.286-291

1992

Volltextzugriff (PDF)

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.134-141

1997

Volltextzugriff (PDF)

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

Materials science forum, 1998-02, Vol.264-268, p.1359-1362

1998

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The adsorption and subsequent oxidation of AsH 3 and PH 3 on activated carbon

Journal of crystal growth, 1988, Vol.92 (1), p.189-195

1988

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Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N

High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

Ion implantation doping and isolation of GaN

Ca and O ion implantation doping of GaN

Ion-implanted GaN junction field effect transistor

Annealing of ion implanted gallium nitride

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

The scaling of CVD rotating disk reactors to large sizes and comparison with theory

Novel 600 V GaN Schottky diode delivering SiC performance at Si prices

Optical Properties of In{sub x}Ga{sub 1-x}N Alloys Grown by Metalorganic Chemical Vapor Deposition

Recessed gate GaN field effect transistor

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga 0.95Al 0.05N

Large scale manufacturing of compound semiconductors by MOVPE

Near-band-edge Photoluminescence Emission in Al{sub x}Ga{sub 1-x}N under High Pressure

Edge-Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire

Optical Properties of GaN Films Grown on SiC/Si

Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors

Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

The adsorption and subsequent oxidation of AsH 3 and PH 3 on activated carbon

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