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Trapezoid defect in 4H–SiC epilayers

Journal of crystal growth, 2012, Vol.338 (1), p.16-19

2012

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Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Journal of electronic materials, 2010-06, Vol.39 (6), p.777-780

2010

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Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Journal of electronic materials, 2007-05, Vol.36 (5), p.539-542

2007

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Applied physics letters, 2003-04, Vol.82 (15), p.2410-2412

2003

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-05, Vol.31 (5), p.370-375

2002

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Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Applied physics letters, 2009-03, Vol.94 (12)

2009

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Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Journal of applied physics, 2007-11, Vol.102 (9)

2007

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Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

Crystal growth & design, 2014-11, Vol.14 (11), p.5331-5338

2014

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Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Applied physics letters, 2000-09, Vol.77 (10), p.1437-1439

2000

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Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 1993-01, Vol.73 (2), p.658-667

1993

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Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

Journal of applied physics, 2013-09, Vol.114 (12)

2013

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Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

Materials science forum, 2007-01, Vol.556-557, p.295-298

2007

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-07, Vol.31 (7), p.827-827

2002

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Materials science forum, 2009-01, Vol.600-603, p.345-348

2009

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X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates

Applied physics letters, 1991-02, Vol.58 (8), p.825-827

1991

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11.72-[Formula Omitted] Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 [Formula Omitted]

IEEE electron device letters, 2012-06, Vol.33 (6), p.764-766

2012

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Partial dislocations and stacking faults in 4H-SiC PiN diodes

Journal of electronic materials, 2004-05, Vol.33 (5), p.472-476

2004

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Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface

Journal of applied physics, 1995-03, Vol.77 (5), p.2032-2040

1995

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Light emission from interface traps and bulk defects in SiC MOSFETs

Journal of electronic materials, 2001-03, Vol.30 (3), p.188-195

2001

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Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

Applied physics letters, 1999-03, Vol.74 (10), p.1448-1450

1999

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Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

Journal of electronic materials, 2005-04, Vol.34 (4), p.382-388

2005

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A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

Materials science forum, 2010-01, Vol.645-648, p.271-276

2010

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Interface defect formation in MOSFETs by atomic hydrogen exposure

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1844-1853

1994

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Trapezoid defect in 4H–SiC epilayers

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates

11.72-[Formula Omitted] Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 [Formula Omitted]

Partial dislocations and stacking faults in 4H-SiC PiN diodes

Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface

Light emission from interface traps and bulk defects in SiC MOSFETs

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

Interface defect formation in MOSFETs by atomic hydrogen exposure

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