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Water insecurity compounds the global coronavirus crisis

Water international, 2020-07, Vol.45 (5), p.416-422

2020

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In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (12), p.121302.1-121302.4, Article 121302

2005

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Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

Journal of physical chemistry. C, 2009-09, Vol.113 (38), p.16565-16567

2009

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Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

Journal of crystal growth, 2014-10, Vol.403, p.43-47

2014

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Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Applied physics letters, 2012-08, Vol.101 (7), p.72402

2012

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Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2964-2966

2012

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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Journal of crystal growth, 2011-05, Vol.323 (1), p.80-83

2011

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Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

Journal of crystal growth, 2009-06, Vol.311 (13), p.3417-3422

2009

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Air as a common good

Environmental science & policy, 2013-11, Vol.33, p.354-368

2013

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Plasma-assisted electroepitaxy as a method for the growth of GaN layers

Journal of crystal growth, 2011-02, Vol.316 (1), p.51-55

2011

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Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics

Journal of physics. D, Applied physics, 2009-06, Vol.42 (11), p.115412-115412 (4)

2009

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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

Journal of crystal growth, 2011-05, Vol.323 (1), p.60-63

2011

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Dispersal of fig seeds in the Cook Islands: introduced frugivores are no substitutes for natives

Biodiversity and conservation, 2010-06, Vol.19 (7), p.1905-1916

2010

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High-quality GaMnAs films grown with arsenic dimers

Journal of crystal growth, 2003, Vol.247 (1), p.42-48

2003

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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

Journal of crystal growth, 2003-04, Vol.251 (1), p.311-316

2003

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Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

Journal of crystal growth, 2012-07, Vol.350 (1), p.80-84

2012

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Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.217-220

2016

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The Social Nature of Participatory Ecological Monitoring

Society & natural resources, 2014-09, Vol.27 (9), p.899-914

2014

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Exploring participation in ecological monitoring in Nepal's community forests

Environmental conservation, 2015-09, Vol.42 (3), p.268-277

2015

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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Scripta materialia, 2012-03, Vol.66 (6), p.351-354

2012

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Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.322 (1), p.23-26

2011

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P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Semiconductor science and technology, 2004-03, Vol.19 (3), p.L13-L16

2004

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Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs

Applied physics letters, 2005-02, Vol.86 (7), p.071902-071902-3

2005

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Magnetic properties of sol-gel-derived doped ZnO as a potential ferromagnetic semiconductor: a synchrotron-based study

New journal of physics, 2008-05, Vol.10 (5), p.055012

2008

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Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3B6

2010

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Water insecurity compounds the global coronavirus crisis

In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

Air as a common good

Plasma-assisted electroepitaxy as a method for the growth of GaN layers

Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics

Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

Dispersal of fig seeds in the Cook Islands: introduced frugivores are no substitutes for natives

High-quality GaMnAs films grown with arsenic dimers

The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

The Social Nature of Participatory Ecological Monitoring

Exploring participation in ecological monitoring in Nepal's community forests

Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs

Magnetic properties of sol-gel-derived doped ZnO as a potential ferromagnetic semiconductor: a synchrotron-based study

Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

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