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Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

Journal of applied physics, 2021-12, Vol.130 (24)

2021

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MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Advanced materials interfaces, 2023-04, Vol.10 (12), p.n/a

2023

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Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Thin solid films, 2011-03, Vol.519 (11), p.3619-3626

2011

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Characterization and optimization of porogen-based PECVD deposited extreme low- k materials as a function of UV-cure time

Surface & coatings technology, 2007-09, Vol.201 (22), p.9264-9268

2007

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Nano-analytical investigation of the forming process in an Hf O 2-based resistive switching memory

Journal of applied physics, 2021-12, Vol.130 (24)

2021

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Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora ® LK HM

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Dielectric Reliability of 50 nm Half Pitch Structures in Aurora ® LK

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FD03-05FD03-4

2010

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MoS 2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Advanced materials interfaces, 2023-04, Vol.10 (12)

2023

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A robust k ∼ 2.3 SiCOH low- k film formed by porogen removal with UV-cure

Microelectronic engineering, 2007-11, Vol.84 (11), p.2575-2581

2007

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Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Use of MIR-FTIR and k-value Measurements to Assess Potential Solutions to Reduce Damage During Porous Low-k Integration

ECS transactions, 2009-03, Vol.18 (1), p.275-280

2009

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Development of sub-10-nm atomic layer deposition barriers for Cu/low- k interconnects

Microelectronic engineering, 2002-10, Vol.64 (1), p.233-245

2002

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A robust k2.3 SiCOH low-k film formed by porogen removal with UV-cure

Microelectronic engineering, 2007-11, Vol.84 (11), p.2575-2581

2007

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Dielectric Reliability of 50nm Half Pitch Structures in Aurora® LK

Japanese Journal of Applied Physics, 2009-04

2009

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Evaluation of integrity and barrier performance of atomic layer deposited W N x C y films on plasma enhanced chemical vapor deposited Si O 2 for Cu metallization

Applied physics letters, 2006-08, Vol.89 (8), p.081913-081913-3

2006

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Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora\text{\textregistered LK HM

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DB05-04DB05-5

2010

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Evaluation of integrity and barrier performance of atomic layer deposited WN{sub x}C{sub y} films on plasma enhanced chemical vapor deposited SiO{sub 2} for Cu metallization

Applied physics letters, 2006-08, Vol.89 (8)

2006

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LEIS Study of ALD WN x C y Growth on Dielectric Layers

ECS transactions, 2006-07, Vol.1 (10), p.71-77

2006

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LPCVD Si3N4 growth retardation on silicon native oxide compared with in situ HF vapour-deglazed silicon substrates

Semiconductor science and technology, 1991-11, Vol.6 (11), p.1100-1102

1991

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Meeting the Cu diffusion barrier challenge using ALD tungsten nitride carbide

Solid state technology, 2005-06, Vol.48 (6), p.54

2005

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LEIS Study of ALD WNxCy on Dielectric Layers

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-02 (12), p.463-463

2006

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Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-09, Vol.17 (5), p.2311-2320

1999

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Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Characterization and optimization of porogen-based PECVD deposited extreme low- k materials as a function of UV-cure time

Nano-analytical investigation of the forming process in an Hf O 2-based resistive switching memory

Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora ® LK HM

Dielectric Reliability of 50 nm Half Pitch Structures in Aurora ® LK

Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability

MoS 2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

A robust k ∼ 2.3 SiCOH low- k film formed by porogen removal with UV-cure

Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization

Use of MIR-FTIR and k-value Measurements to Assess Potential Solutions to Reduce Damage During Porous Low-k Integration

Development of sub-10-nm atomic layer deposition barriers for Cu/low- k interconnects

A robust k2.3 SiCOH low-k film formed by porogen removal with UV-cure

Dielectric Reliability of 50nm Half Pitch Structures in Aurora® LK

Evaluation of integrity and barrier performance of atomic layer deposited W N x C y films on plasma enhanced chemical vapor deposited Si O 2 for Cu metallization

Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora\text{\textregistered LK HM

Evaluation of integrity and barrier performance of atomic layer deposited WN{sub x}C{sub y} films on plasma enhanced chemical vapor deposited SiO{sub 2} for Cu metallization

LEIS Study of ALD WN x C y Growth on Dielectric Layers

LPCVD Si3N4 growth retardation on silicon native oxide compared with in situ HF vapour-deglazed silicon substrates

Meeting the Cu diffusion barrier challenge using ALD tungsten nitride carbide

LEIS Study of ALD WNxCy on Dielectric Layers

Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe

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