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Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

APL materials, 2019-02, Vol.7 (2), p.022516-022516-11

2019

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Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

APL materials, 2019-02, Vol.7 (2), p.022525-022525-9

2019

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Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Semiconductor science and technology, 2015-02, Vol.30 (2)

2015

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Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

APL materials, 2020-05, Vol.8 (5), p.051112-051112-14

2020

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Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

APL materials, 2019-11, Vol.7 (11), p.111110-111110-8

2019

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Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

APL materials, 2020-02, Vol.8 (2), p.021103-021103-6

2020

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Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

APL materials, 2019-10, Vol.7 (10), p.101102-101102-10

2019

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Properties of Schottky Barrier Diodes on (In x Ga1–x )2O3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

ACS combinatorial science, 2015-12, Vol.17 (12), p.710-715

2015

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Schottky contacts to In2O3

APL materials, 2014-04, Vol.2 (4), p.046104-046104-7

2014

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Cation segregation observed in an (In,Ga) 2 O3 material thin film library beyond the miscibility limit of the bixbyite structure

Physical review materials, 2023-09

2023

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Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

APL materials, 2019-07, Vol.7 (7), p.079901-079901-1

2019

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Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Properties of Schottky barrier diodes on heteroeptixial α - Ga 2O3 thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Cation segregation observed in an (In,Ga) 2 O 3 material thin film library beyond the miscibility limit of the bixbyite structure

Physical review materials, 2023-09, Vol.7 (9), Article 094603

2023

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Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model

Physical review applied, 2022-02, Vol.17 (2), Article 024007

2022

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Properties of Schottky Barrier Diodes on (In x Ga 1– x ) 2 O 3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

ACS combinatorial science, 2015-12, Vol.17 (12), p.710-715

2015

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Structural and optical properties of (In,Ga) 2 O 3 thin films and characteristics of Schottky contacts thereon

Semiconductor science and technology, 2015-02, Vol.30 (2), p.24005

2015

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Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

ACS combinatorial science, 2015-12, Vol.17 (12), p.710-715

2015

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Schottky contacts to In{sub 2}O{sub 3}

APL materials, 2014-04, Vol.2 (4)

2014

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Collaborative smartphone experiments for large audiences with phyphox

European journal of physics, 2022-09, Vol.43 (5), p.55702

2022

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Increased plasma levels of microparticles expressing CD39 and CD133 in acute liver injury

Transplantation, 2013-01, Vol.95 (1), p.63-69

2013

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Molecular Dynamics Phenomena of Water in the Metalorganic Framework MIL-100(Al), as Revealed by Pulsed Field Gradient NMR and Atomistic Simulation

Journal of physical chemistry. C, 2017-08, Vol.121 (33), p.18065-18074

2017

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Humane mesenchymale Stammzellen fördern Regeneration und modulieren metabolische Veränderungen nach partieller Leberregeneration in BALB/c-Mäusen

Zeitschrift für Gastroenterologie, 2018, Vol.56 (8), p.e254-e254

2018

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Increased Plasma Levels of CD133+ Microparticles Bearing Ectonucleotidases Are Noted in Acute Liver Failure in Patients and in Experimental Mouse Models: 1164

Transplantation, 2012-11, Vol.94 (10S), p.282

2012

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Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

Properties of Schottky Barrier Diodes on (In x Ga1–x )2O3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

Schottky contacts to In2O3

Cation segregation observed in an (In,Ga) 2 O3 material thin film library beyond the miscibility limit of the bixbyite structure

Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Properties of Schottky barrier diodes on heteroeptixial α - Ga 2O3 thin films

Cation segregation observed in an (In,Ga) 2 O 3 material thin film library beyond the miscibility limit of the bixbyite structure

Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model

Properties of Schottky Barrier Diodes on (In x Ga 1– x ) 2 O 3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

Structural and optical properties of (In,Ga) 2 O 3 thin films and characteristics of Schottky contacts thereon

Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

Schottky contacts to In{sub 2}O{sub 3}

Collaborative smartphone experiments for large audiences with phyphox

Increased plasma levels of microparticles expressing CD39 and CD133 in acute liver injury

Molecular Dynamics Phenomena of Water in the Metalorganic Framework MIL-100(Al), as Revealed by Pulsed Field Gradient NMR and Atomistic Simulation

Humane mesenchymale Stammzellen fördern Regeneration und modulieren metabolische Veränderungen nach partieller Leberregeneration in BALB/c-Mäusen

Increased Plasma Levels of CD133+ Microparticles Bearing Ectonucleotidases Are Noted in Acute Liver Failure in Patients and in Experimental Mouse Models: 1164

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