UB Paderborn / Katalog / Suche / in CDI

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2003-10, Vol.512 (1), p.167-178

2003

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Fermilab silicon strip readout chip for BTeV

IEEE transactions on nuclear science, 2005-06, Vol.52 (3), p.799-804

2005

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IEEE_Xplore

Low-noise design criteria for detector readout systems in deep submicron CMOS technology

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2002-02, Vol.478 (1), p.362-366

2002

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Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2880-2886

2004

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IEEE_Xplore

Selection criteria for P- and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers

IEEE transactions on nuclear science, 2001-08, Vol.48 (4), p.1598-1604

2001

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IEEE_Xplore

JFET front-end circuits integrated in a detector-grade silicon substrate

IEEE transactions on nuclear science, 2003-08, Vol.50 (4), p.942-947

2003

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IEEE_Xplore

Suboptimal filtering of 1/ƒ-noise in detector charge measurements

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1990-12, Vol.297 (3), p.467-478

1990

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A fabrication process for silicon microstrip detectors with integrated front-end electronics

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1022-1026

2002

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IEEE_Xplore

Response of SOI bipolar transistors exposed to /spl gamma/-rays under different dose rate and bias conditions

IEEE transactions on nuclear science, 2005-08, Vol.52 (4), p.1040-1047

2005

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IEEE_Xplore

Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

IEEE transactions on nuclear science, 2004-06, Vol.51 (3), p.980-986

2004

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IEEE_Xplore

Correction to "Selection criteria for F and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers"

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2432-2432

2001

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IEEE_Xplore

The analog signal processor of the Auger fluorescence detector prototype

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2001-04, Vol.461 (1), p.440-448

2001

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Total ionizing dose effects on the noise performances of a 0.13 mu m CMOS technology

IEEE transactions on nuclear science, 2006-06, Vol.53 (3)

2006

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Monolithic pixel detectors in a 0.13 μ m CMOS technology with sensor level continuous time charge amplification and shaping

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2006-11, Vol.568 (1), p.159-166

2006

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Feasibility studies of microelectrode silicon detectors with integrated electronics

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2002-02, Vol.478 (1), p.372-376

2002

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Development of a detector for bunch by bunch measurement and optimization of luminosity in the LHC

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2001-04, Vol.461 (1), p.107-110

2001

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Monolithic JFET preamplifier with nonresistive charge reset

IEEE transactions on nuclear science, 1998-08, Vol.45 (4), p.2257-2260

1998

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IEEE_Xplore

Initial test results of an ionization chamber shower detector for a LHC luminosity monitor

IEEE transactions on nuclear science, 2003-04, Vol.50 (2), p.258-262

2003

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IEEE_Xplore

JFET-based monolithic preamplifiers for spectrometry applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1996-10, Vol.380 (1), p.308-311

1996

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Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime

Resolution Limits in 130 nm and 90 nm CMOS Technologies for Analog Front-End Applications

Submicron CMOS technologies for low-noise analog front-end circuits

Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers

Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics

Resolution limits achievable with CMOS front-end in X- and γ-ray analysis with semiconductor detectors

Fermilab silicon strip readout chip for BTeV

Low-noise design criteria for detector readout systems in deep submicron CMOS technology

Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon

Selection criteria for P- and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers

JFET front-end circuits integrated in a detector-grade silicon substrate

Suboptimal filtering of 1/ƒ-noise in detector charge measurements

A fabrication process for silicon microstrip detectors with integrated front-end electronics

Response of SOI bipolar transistors exposed to /spl gamma/-rays under different dose rate and bias conditions

Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

Correction to "Selection criteria for F and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers"

The analog signal processor of the Auger fluorescence detector prototype

Total ionizing dose effects on the noise performances of a 0.13 mu m CMOS technology

Monolithic pixel detectors in a 0.13 μ m CMOS technology with sensor level continuous time charge amplification and shaping

Feasibility studies of microelectrode silicon detectors with integrated electronics

Development of a detector for bunch by bunch measurement and optimization of luminosity in the LHC

Monolithic JFET preamplifier with nonresistive charge reset

Initial test results of an ionization chamber shower detector for a LHC luminosity monitor

JFET-based monolithic preamplifiers for spectrometry applications

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