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Nonpolar and Semipolar Group III Nitride-Based Materials

MRS bulletin, 2009-05, Vol.34 (5), p.304-312

2009

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Symptoms of Idiopathic Environmental Intolerance associated with chemicals (IEI-C) are positively associated with perceptual anomalies

Journal of psychosomatic research, 2022-06, Vol.157, p.110808-110808, Article 110808

2022

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Improved growth rates and purity of basic ammonothermal GaN

Journal of crystal growth, 2014-10, Vol.403, p.7-17

2014

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Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

Optics express, 2020-06, Vol.28 (12), p.17934-17943

2020

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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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Synthesis and Electrochemical Investigations of [Ru(η5‐Ferrocenyl‐Thiophene)(η5‐C5R5)]+ Sandwich Compounds

European journal of inorganic chemistry, 2019-05, Vol.2019 (19), p.2419-2429

2019

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Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Semiconductor science and technology, 2021-12, Vol.36 (12), p.123001

2021

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Atropisomeric 3,3′,4,4′,5,5′-Hexaferrocenyl-2,2′-bithiophene: Synthesis, Solid-State Structure, and Electrochemistry

Organometallics, 2012-03, Vol.31 (5), p.1975-1982

2012

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Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Applied physics letters, 2015-07, Vol.107 (1)

2015

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Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024001

2012

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Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Physical review. B, 2018-07, Vol.98 (4), p.045305, Article 045305

2018

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Substituent Influence on Charge Transfer Interactions in α,α′-Diferrocenylthiophenes

Organometallics, 2014-09, Vol.33 (18), p.4813-4823

2014

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Electron Transfer Studies on Ferrocenylthiophenes: Synthesis, Properties, and Electrochemistry

Organometallics, 2012-09, Vol.31 (17), p.6373-6380

2012

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Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Ferrocenes Bridged by Ethylenediamino Thiophene: Varying Charge Transfer Properties in a Series of 3,4-Di-N-substituted 2,5-Diferrocenyl Thiophenes

Organometallics, 2015-08, Vol.34 (15), p.3788-3798

2015

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Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

Applied physics letters, 2022-10, Vol.121 (18)

2022

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Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Applied physics letters, 2015-08, Vol.107 (9)

2015

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All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity

Optics express, 2019-03, Vol.27 (5), p.6618-6628

2019

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Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

Journal of crystal growth, 2015-12, Vol.432 (C), p.49-53

2015

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Metal–Metal Interaction in Fischer Carbene Complexes: A Study of Ferrocenyl and Biferrocenyl Tungsten Alkylidene Complexes

Inorganic chemistry, 2013-12, Vol.52 (24), p.14253-14263

2013

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Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Applied physics letters, 2016-11, Vol.109 (21)

2016

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High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Applied physics letters, 2014-04, Vol.104 (16)

2014

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Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

Applied physics letters, 2021-11, Vol.119 (22)

2021

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(1)H NMR spectroscopic elucidation in solution of the kinetics and thermodynamics of spin crossover for an exceptionally robust Fe(2+) complex

Dalton transactions : an international journal of inorganic chemistry, 2016-09, Vol.45 (35), p.13798-13809

2016

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Nonpolar and Semipolar Group III Nitride-Based Materials

Symptoms of Idiopathic Environmental Intolerance associated with chemicals (IEI-C) are positively associated with perceptual anomalies

Improved growth rates and purity of basic ammonothermal GaN

Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

High-power AlGaN/GaN HEMTs for Ka-band applications

Synthesis and Electrochemical Investigations of [Ru(η5‐Ferrocenyl‐Thiophene)(η5‐C5R5)]+ Sandwich Compounds

Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Atropisomeric 3,3′,4,4′,5,5′-Hexaferrocenyl-2,2′-bithiophene: Synthesis, Solid-State Structure, and Electrochemistry

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Substituent Influence on Charge Transfer Interactions in α,α′-Diferrocenylthiophenes

Electron Transfer Studies on Ferrocenylthiophenes: Synthesis, Properties, and Electrochemistry

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

Ferrocenes Bridged by Ethylenediamino Thiophene: Varying Charge Transfer Properties in a Series of 3,4-Di-N-substituted 2,5-Diferrocenyl Thiophenes

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

Metal–Metal Interaction in Fischer Carbene Complexes: A Study of Ferrocenyl and Biferrocenyl Tungsten Alkylidene Complexes

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

(1)H NMR spectroscopic elucidation in solution of the kinetics and thermodynamics of spin crossover for an exceptionally robust Fe(2+) complex

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