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Evidence of field induced nucleation in phase change memory

Applied physics letters, 2008-04, Vol.92 (17), p.173501-173501-3

2008

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Thermo-mechanical modelling of Black Sea Basin (de)formation

Sedimentary geology, 2003-02, Vol.156 (1), p.169-184

2003

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Universal glass dynamics in PCM nano-glasses

MRS proceedings, 2008, Vol.1072, Article 1072-G02-09

2008

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Role of pre-rift rheology in kinematics of extensional basin formation: constraints from thermomechanical models of Mediterranean and intracratonic basins

Marine and petroleum geology, 1995, Vol.12 (8), p.793-807

1995

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Transport properties of polycrystalline silicon films

Journal of applied physics, 1978-11, Vol.49 (11), p.5565-5570

1978

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Western versus Eastern Black Sea tectonic evolution: pre-rift lithospheric controls on basin formation

Tectonophysics, 1996-12, Vol.266 (1), p.139-154

1996

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Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

MRS proceedings, 2010, Vol.1250 (1), Article 1250-G14-01-H07-01

2010

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A stackable cross point Phase Change Memory

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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IEEE_Xplore

Stratigraphic evolution of the Black Sea: inferences from basin modelling

Marine and petroleum geology, 1995, Vol.12 (8), p.821-835

1995

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Spacing of consecutive normal faulting in the lithosphere: A dynamic model for rift axis jumping (Tyrrhenian Sea)

Earth and planetary science letters, 1996-10, Vol.144 (1), p.21-34

1996

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Kinematic modelling of the West Antarctic Rift System, Ross Sea, Antarctica

Global and planetary change, 1999-12, Vol.23 (1), p.79-103

1999

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Shadowing effects due to tilted arsenic source/drain implant

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2458-2461

1989

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IEEE_Xplore

Tectono-stratigraphic modelling of the Sardinian margin of the Tyrrhenian Sea

Tectonophysics, 1995-12, Vol.252 (1), p.269-284

1995

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Interpretation of C- V measurements for determining the doping profile in semiconductors

Solid-state electronics, 1980, Vol.23 (1), p.65-71

1980

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Structural evolution of the '41st parallel zone': Tyrrhenian Sea

Terra nova (Oxford, England), 1994-11, Vol.6 (6), p.552-562

1994

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The Role of Interfaces in Damascene Phase-Change Memory

2007 IEEE International Electron Devices Meeting, 2007, p.323-326

2007

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IEEE_Xplore

Stratigraphic evolution of the Black Sea : inferences from basin modelling: Integrated basin studies (IBS) : project of the European Commission (DGXII) Joule 2/Geosciences II program (contract JOU2-CT92-0110)

Marine and petroleum geology, 1995, Vol.12 (8), p.821-835

1995

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Phase change memory parameters: Effects of atomic transformations

2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2008, p.1-5

2008

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IEEE_Xplore

Role of pre-rift rheology in kinematics of extensional basin formation : constraints from thermomechanical models of Mediterranean and intracratonic basins: Integrated basin studies (IBS) : project of the European Commission (DGXII) Joule 2/Geosciences II program (contract JOU2-CT92-0110)

Marine and petroleum geology, 1995, Vol.12 (8), p.793-807

1995

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Temporal Changes of Parameters in Phase Change Memory

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.140-141

2008

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IEEE_Xplore

Interconnections in application specific VLSI

European transactions on telecommunications, 1990-03, Vol.1 (2), p.179-184

1990

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Determination of the state density at the Si-SiO2 interface

Thin solid films, 1980-05, Vol.68 (2), p.315-332

1980

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Field inversion in CMOS double metal circuits due to carbon based SOGs

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference, 1989, p.454-462

1989

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A high reliability metallization system for a double metal 1.5 mu m CMOS process

1988. Proceedings., Fifth International IEEE VLSI Multilevel Interconnection Conference, 1988, p.453-459

1988

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Majority- and minority-carrier lifetime in MOS structures

Solid-state electronics, 1975, Vol.18 (12), p.1115-1122

1975

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Evidence of field induced nucleation in phase change memory

Thermo-mechanical modelling of Black Sea Basin (de)formation

Universal glass dynamics in PCM nano-glasses

Role of pre-rift rheology in kinematics of extensional basin formation: constraints from thermomechanical models of Mediterranean and intracratonic basins

Transport properties of polycrystalline silicon films

Western versus Eastern Black Sea tectonic evolution: pre-rift lithospheric controls on basin formation

Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

A stackable cross point Phase Change Memory

Stratigraphic evolution of the Black Sea: inferences from basin modelling

Spacing of consecutive normal faulting in the lithosphere: A dynamic model for rift axis jumping (Tyrrhenian Sea)

Kinematic modelling of the West Antarctic Rift System, Ross Sea, Antarctica

Shadowing effects due to tilted arsenic source/drain implant

Tectono-stratigraphic modelling of the Sardinian margin of the Tyrrhenian Sea

Interpretation of C- V measurements for determining the doping profile in semiconductors

Structural evolution of the '41st parallel zone': Tyrrhenian Sea

The Role of Interfaces in Damascene Phase-Change Memory

Stratigraphic evolution of the Black Sea : inferences from basin modelling: Integrated basin studies (IBS) : project of the European Commission (DGXII) Joule 2/Geosciences II program (contract JOU2-CT92-0110)

Phase change memory parameters: Effects of atomic transformations

Role of pre-rift rheology in kinematics of extensional basin formation : constraints from thermomechanical models of Mediterranean and intracratonic basins: Integrated basin studies (IBS) : project of the European Commission (DGXII) Joule 2/Geosciences II program (contract JOU2-CT92-0110)

Temporal Changes of Parameters in Phase Change Memory

Interconnections in application specific VLSI

Determination of the state density at the Si-SiO2 interface

Field inversion in CMOS double metal circuits due to carbon based SOGs

A high reliability metallization system for a double metal 1.5 mu m CMOS process

Majority- and minority-carrier lifetime in MOS structures

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