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Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy

Nano letters, 2024-03, Vol.24 (12), p.3557-3565

2024

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Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Nano letters, 2023-09, Vol.23 (17), p.7869-7875

2023

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Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

Scientific reports, 2016-02, Vol.6 (1), p.21246-21246, Article 21246

2016

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Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars

Nano letters, 2022-05, Vol.22 (10), p.4000-4005

2022

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Engineering of Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions at Cryogenic Temperatures

IEEE transactions on magnetics, 2023-11, Vol.59 (11), p.1-1

2023

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IEEE_Xplore

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Conditioning Circuits For Nanoscale Perpendicular Spin Transfer Torque Magnetic Tunnel Junctions As Magnetic Sensors

IEEE sensors journal, 2023-03, Vol.23 (6), p.1-1

2023

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IEEE_Xplore

Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance

Nanoscale, 2021-09, Vol.13 (33), p.1496-1419

2021

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Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

Journal of applied physics, 2015-06, Vol.117 (23)

2015

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Real-time electrical measurements during laser attack on STT-MRAM

2023 35th International Conference on Microelectronic Test Structure (ICMTS), 2023, p.1-6

2023

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IEEE_Xplore

A Magnetic Sensor Based on a Nanometric Spin Transfer Torque Magnetic Tunnel Junction Suitable for Monolithic Integration

2022 IEEE Sensors, 2022, p.1-4

2022

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IEEE_Xplore

Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices

ACS applied electronic materials, 2021-11, Vol.3 (11), p.4774-4780

2021

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Field Dependence of Spin-Transfer Torque Switching Current in Perpendicular Magnetic Tunnel Junctions

IEEE transactions on magnetics, 2014-11, Vol.50 (11), p.1-4

2014

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IEEE_Xplore

A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy

Nanoscale, 2018-01, Vol.1 (25), p.12187-12195

2018

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Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Scientific reports, 2020-03, Vol.10 (1), p.5211-5211, Article 5211

2020

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FeMn Exchange Biased Storage Layer for Thermally Assisted MRAM

IEEE transactions on magnetics, 2010-06, Vol.46 (6), p.2486-2488

2010

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IEEE_Xplore

A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

Journal of magnetism and magnetic materials, 2020-07, Vol.505, p.166647, Article 166647

2020

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Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy

Nanoscale, 2020-03, Vol.12 (11), p.6378-6384

2020

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Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits

Nanotechnology, 2020-10, Vol.31 (42), p.425302-425302

2020

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Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions

AIP advances, 2019-12, Vol.9 (12), p.125328-125328-5

2019

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Evaluating critical metals contained in spintronic memory with a particular focus on Pt substitution for improved sustainability

Sustainable Materials and Technologies, 2021-07, Vol.28, p.e00270, Article e00270

2021

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Influence of ion beam milling parameters on MRAM switching

IEEE transactions on magnetics, 2001-07, Vol.37 (4), p.1973-1975

2001

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IEEE_Xplore

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Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars

Engineering of Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions at Cryogenic Temperatures

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

Conditioning Circuits For Nanoscale Perpendicular Spin Transfer Torque Magnetic Tunnel Junctions As Magnetic Sensors

Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance

Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

Real-time electrical measurements during laser attack on STT-MRAM

A Magnetic Sensor Based on a Nanometric Spin Transfer Torque Magnetic Tunnel Junction Suitable for Monolithic Integration

Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices

Field Dependence of Spin-Transfer Torque Switching Current in Perpendicular Magnetic Tunnel Junctions

A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

FeMn Exchange Biased Storage Layer for Thermally Assisted MRAM

A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy

Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits

Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions

Evaluating critical metals contained in spintronic memory with a particular focus on Pt substitution for improved sustainability

Influence of ion beam milling parameters on MRAM switching

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