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Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm

Journal of electronic materials, 2024-08, Vol.53 (8), p.4421-4431

2024

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The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Physical chemistry chemical physics : PCCP, 2015-10, Vol.17 (37), p.23931-23937

2015

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Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.311-315

2016

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On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories

Solid-state electronics, 2013-06, Vol.84, p.155-159

2013

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Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

Thin solid films, 2013-04, Vol.533, p.61-65

2013

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Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation

Journal of physics. Conference series, 2016, Vol.712 (1), p.12046

2016

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Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory

Thin solid films, 2014-07, Vol.563, p.15-19

2014

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Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Thin solid films, 2013-04, Vol.533, p.54-60

2013

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The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memoriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5cp03601a

2015-09

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On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012, p.278-281

2012

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Role of Sb dopant in Ag:GeS sub(x)-based conducting bridge random access memories

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.311-315

2016

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Role of Sb dopant in Ag:GeS x ‐based conducting bridge random access memories

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.311-315

2016

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40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2023, p.101-104

2023

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Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM

2012 International Electron Devices Meeting, 2012, p.31.5.1-31.5.4

2012

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Le citoyen, le politique et le journaliste

Communication & langages, 1997 (112), p.67-84

SOUCHIER, E

1997

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L'automate bancaire : un multimédia très ordinaire

Communication & langages, 1999 (122), p.86-102

1999

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L'étiquette des vins: analyse d'un objet ordinaire

Communication & langages, 1999 (121), p.72-85

1999

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Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM)

2013 IEEE International Electron Devices Meeting, 2013, p.30.2.1-30.2.4

2013

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A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.17.7.1-17.7.4

2016

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On disturb immunity and P/E kinetics of Sb-doped GeS2/Ag conductive bridge memories

2013 5th IEEE International Memory Workshop, 2013, p.96-99

2013

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Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow

2012 International Electron Devices Meeting, 2012, p.18.7.1-18.7.4

2012

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Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-4

2011

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Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al sub(2)O sub(3)/CuTeGe conductive bridge RAM (CBRAM)

Technical digest - International Electron Devices Meeting, 2013-12, p.30.2.1-30.2.4

2013

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Thin Layers Obtained by Plasma Process for Emerging Non-Volatile Memory (RRAM) Applications

2009 IEEE International Memory Workshop, 2009, p.1-2

2009

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Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories

On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories

Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation

Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memoriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5cp03601a

On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories

Role of Sb dopant in Ag:GeS sub(x)-based conducting bridge random access memories

Role of Sb dopant in Ag:GeS x ‐based conducting bridge random access memories

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications

Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM

Le citoyen, le politique et le journaliste

L'automate bancaire : un multimédia très ordinaire

L'étiquette des vins: analyse d'un objet ordinaire

Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM)

A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

On disturb immunity and P/E kinetics of Sb-doped GeS2/Ag conductive bridge memories

Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow

Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory

Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al sub(2)O sub(3)/CuTeGe conductive bridge RAM (CBRAM)

Thin Layers Obtained by Plasma Process for Emerging Non-Volatile Memory (RRAM) Applications

Nanosession: Phase Change Materials

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