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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Semiconductors (Woodbury, N.Y.), 2023-06, Vol.57 (6), p.300-304

2023

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Features of InP on Si Nanowire Growth

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.238-240

2024

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Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (20), Article 205325

2005

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Specific Features of Structural Stresses in InGaN/GaN Nanowires

Semiconductors (Woodbury, N.Y.), 2021-10, Vol.55 (10), p.795-798

2021

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Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2021-08, Vol.55 (8), p.678-681

2021

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Optical field distribution in quasy-lD nanostructures

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12154

2016

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The Nature and Role of the Nickel Species in the Ni(II) α-Diimine-based Ethylene Polymerization Catalyst Systems (A Review)

Russian journal of general chemistry, 2023-11, Vol.93 (Suppl 1), p.S317-S326

2023

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Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12109

2020

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AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

Journal of physics. D, Applied physics, 2017-12, Vol.50 (48), p.484003

2017

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Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

Physics of the solid state, 2018-05, Vol.60 (5), p.852-857

2018

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Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

Crystal growth & design, 2016-12, Vol.16 (12), p.7251-7255

2016

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Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN

Technical physics letters, 2023-12, Vol.49 (Suppl 4), p.S364-S367

2023

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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Nanotechnology, 2018-01, Vol.29 (4), p.045602-045602

2018

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Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2009-05, Vol.3 (4), p.112-114

2009

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On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

Surface investigation, x-ray, synchrotron and neutron techniques, 2024-04, Vol.18 (2), p.408-412

2024

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Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Thin solid films, 2016-05, Vol.606, p.74-79

2016

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Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12013

2021

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Separation of III-N partially-coalesced nanowire arrays from Si substrate

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12191

2021

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Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12098

2021

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III-V nanowires with quantum dots: MBE growth and properties

Journal of physics. Conference series, 2021-11, Vol.2015 (1), p.12124

2021

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Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2082-2084

2019

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InP nanowires on Si(111) for piezotronic applications

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12014

2021

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Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12047

2020

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ZnO thin films synthesis by RF magnetron sputtering deposition

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12054

2019

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InGaN GaN heterostructures with lateral confinement for light emitting diodes

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12083

2016

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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Features of InP on Si Nanowire Growth

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

Specific Features of Structural Stresses in InGaN/GaN Nanowires

Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy

Optical field distribution in quasy-lD nanostructures

The Nature and Role of the Nickel Species in the Ni(II) α-Diimine-based Ethylene Polymerization Catalyst Systems (A Review)

Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN

New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

Separation of III-N partially-coalesced nanowire arrays from Si substrate

Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

III-V nanowires with quantum dots: MBE growth and properties

Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis

InP nanowires on Si(111) for piezotronic applications

Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication

ZnO thin films synthesis by RF magnetron sputtering deposition

InGaN GaN heterostructures with lateral confinement for light emitting diodes

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