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Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electronics letters, 2015-05, Vol.51 (11), p.854-856

2015

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Carrier-induced change in refractive index of InP, GaAs and InGaAsP

IEEE journal of quantum electronics, 1990-01, Vol.26 (1), p.113-122

1990

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Design of quantum-dot lasers with an indirect bandgap short-period Superlattice for reducing the linewidth enhancement factor

IEEE photonics technology letters, 2004-10, Vol.16 (10), p.2203-2205

2004

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Population-inversion and gain estimates for a semiconductor TASER

IEEE journal of quantum electronics, 2001-01, Vol.37 (1), p.153-158

2001

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Silicon-based optoelectronics

Proceedings of the IEEE, 1993-12, Vol.81 (12), p.1687-1706

Soref, R.A.

1993

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Si‐based Ge 0.9 Sn 0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electronics letters, 2015-05, Vol.51 (11), p.854-856

2015

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Phonon-pumped SiGe-Si interminiband terahertz laser

IEEE journal of selected topics in quantum electronics, 2001-03, Vol.7 (2), p.376-380

2001

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Introduction to the issue on integrated optics and optoelectronics

IEEE journal of selected topics in quantum electronics, 2002-11, Vol.8 (6), p.1215-1216

2002

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Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

Electronics letters, 2009-06, Vol.21 (21), p.953

2009

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Efficient Si-on-Ge tandem solar cell

2009 6th IEEE International Conference on Group IV Photonics, 2009, p.187-189

2009

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Proposed N-wavelength M-fiber WDM crossconnect switch using active microring resonators

IEEE photonics technology letters, 1998-08, Vol.10 (8), p.1121-1123

1998

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Waveguided electro-optical intensity modulation in a Si/GexSi1−x/Si heterojunction bipolar transistor

Electronics letters, 1990, Vol.26 (20), p.1653

1990

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The advantages of p-type and design methodologies for Si 1− xGe x far-infrared (terahertz) quantum well infrared photodetectors (QWIPs)

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.13 (2), p.1055-1058

2002

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Optical Add-Drop Filter Design Based on Photonic Crystal Ring Resonators

2007 Conference on Lasers and Electro-Optics (CLEO), 2007, p.1-2

2007

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Modeling the capture probability and enhancing the photoconductive gain in quantum well infrared photodetectors (QWIPs)

Infrared physics & technology, 2003-10, Vol.44 (5), p.481-485

2003

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Theory of the strain-symmetrized silicon-based Ge-Si superlattice laser

IEEE journal of selected topics in quantum electronics, 1998-11, Vol.4 (6), p.1029-1034

1998

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Transverse field effects in nematic liquid crystals

Applied physics letters, 1973-02, Vol.22 (4), p.165-166

Soref, R.A.

1973

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Design of a GaN/AlGaN intersubband Raman laser electrically tunable over the 3∼5 μm atmospheric transmission window

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006, p.1-2

2006

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Quantum parallel laser: a unipolar superlattice interminiband laser

IEEE photonics technology letters, 1997-05, Vol.9 (5), p.593-595

1997

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Introduction to the Issue on Silicon-Based Optoelectronics

IEEE journal of selected topics in quantum electronics, 1998-11, Vol.4 (6), p.897-898

1998

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The advantages of p-type and design methodologies for Si1−xGex far-infrared (terahertz) quantum well infrared photodetectors (QWIPs)

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2-4), p.1055-1058

2002

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Asymmetric strain-symmetrized Ge-Si interminiband laser

IEEE photonics technology letters, 1998-12, Vol.10 (12), p.1715-1717

1998

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Vertically integrated silicon-on-insulator waveguides

IEEE photonics technology letters, 1991-01, Vol.3 (1), p.22-24

1991

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Towards SiGe Terahertz VCSELs

Materials science forum, 2004-01, Vol.453-454, p.1-8

2004

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Optical memory characteristics of a SrS(Eu, Sm) phosphor

Proceedings of the IEEE, 1966-01, Vol.54 (3), p.425-426

Soref, R.A.

1966

Volltextzugriff (PDF)

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Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Design of quantum-dot lasers with an indirect bandgap short-period Superlattice for reducing the linewidth enhancement factor

Population-inversion and gain estimates for a semiconductor TASER

Silicon-based optoelectronics

Si‐based Ge 0.9 Sn 0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Phonon-pumped SiGe-Si interminiband terahertz laser

Introduction to the issue on integrated optics and optoelectronics

Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

Efficient Si-on-Ge tandem solar cell

Proposed N-wavelength M-fiber WDM crossconnect switch using active microring resonators

Waveguided electro-optical intensity modulation in a Si/GexSi1−x/Si heterojunction bipolar transistor

The advantages of p-type and design methodologies for Si 1− xGe x far-infrared (terahertz) quantum well infrared photodetectors (QWIPs)

Optical Add-Drop Filter Design Based on Photonic Crystal Ring Resonators

Modeling the capture probability and enhancing the photoconductive gain in quantum well infrared photodetectors (QWIPs)

Theory of the strain-symmetrized silicon-based Ge-Si superlattice laser

Transverse field effects in nematic liquid crystals

Design of a GaN/AlGaN intersubband Raman laser electrically tunable over the 3∼5 μm atmospheric transmission window

Quantum parallel laser: a unipolar superlattice interminiband laser

Introduction to the Issue on Silicon-Based Optoelectronics

The advantages of p-type and design methodologies for Si1−xGex far-infrared (terahertz) quantum well infrared photodetectors (QWIPs)

Asymmetric strain-symmetrized Ge-Si interminiband laser

Vertically integrated silicon-on-insulator waveguides

Towards SiGe Terahertz VCSELs

Optical memory characteristics of a SrS(Eu, Sm) phosphor

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