UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 230

Sortiert nach

The Past, Present, and Future of Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1678-1687

Soref, R.

2006

Link zum Volltext
IEEE_Xplore

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

Journal of applied physics, 2012-10, Vol.112 (7)

2012

Link zum Volltext

Verfügbarkeit prüfen

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Applied physics letters, 2013-12, Vol.103 (23)

2013

Link zum Volltext

Verfügbarkeit prüfen

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

Optics express, 2010-09, Vol.18 (19), p.19957-19965

2010

Link zum Volltext

Verfügbarkeit prüfen

Germanium as a material for stimulated Brillouin scattering in the mid-infrared

Optics express, 2014-12, Vol.22 (25), p.30735-30747

2014

Link zum Volltext

Verfügbarkeit prüfen

Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector

Optics express, 2022-11, Vol.30 (23), p.42385-42393

2022

Link zum Volltext

Verfügbarkeit prüfen

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Journal of applied physics, 2010-08, Vol.108 (3), p.033107-033107-6

2010

Link zum Volltext

Verfügbarkeit prüfen

Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Applied physics letters, 2016-04, Vol.108 (15)

2016

Link zum Volltext

Verfügbarkeit prüfen

Practical enhancement of photoluminescence by metal nanoparticles

Applied physics letters, 2009-03, Vol.94 (10), p.101103-101103-3

2009

Link zum Volltext

Verfügbarkeit prüfen

Design and simulation of silicon microring optical routing switches

Journal of lightwave technology, 2005-04, Vol.23 (4), p.1800-1807

2005

Link zum Volltext
IEEE_Xplore

Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

Applied physics letters, 2013-05, Vol.102 (18)

2013

Link zum Volltext

Verfügbarkeit prüfen

High efficiency thin-film crystalline Si/Ge tandem solar cell

Optics express, 2010-02, Vol.18 (4), p.3746-3753

2010

Link zum Volltext

Verfügbarkeit prüfen

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Applied physics letters, 2016-05, Vol.108 (19)

2016

Link zum Volltext

Verfügbarkeit prüfen

Practical limits of absorption enhancement near metal nanoparticles

Applied physics letters, 2009-02, Vol.94 (7), p.071103-071103-3

2009

Link zum Volltext

Verfügbarkeit prüfen

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

ACS applied nano materials, 2019-12, Vol.2 (12), p.7503-7512

2019

Link zum Volltext

Verfügbarkeit prüfen

Synthesis of dual-microring-resonator cross-connect filters

Optics express, 2005-06, Vol.13 (12), p.4439-4456

2005

Link zum Volltext

Verfügbarkeit prüfen

Silicon-based optoelectronics

Proceedings of the IEEE, 1993-12, Vol.81 (12), p.1687-1706

Soref, R.A.

1993

Link zum Volltext
IEEE_Xplore

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Applied physics letters, 2007-06, Vol.90 (25)

2007

Link zum Volltext

Verfügbarkeit prüfen

Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1-14- \mu\hbox Infrared Wavelength Range

IEEE photonics journal, 2011-12, Vol.3 (6), p.1171-1180

2011

Link zum Volltext

Verfügbarkeit prüfen

SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Applied physics letters, 2001-01, Vol.78 (4), p.401-403

2001

Link zum Volltext

Verfügbarkeit prüfen

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electronics letters, 2015-05, Vol.51 (11), p.854-856

2015

Link zum Volltext

Verfügbarkeit prüfen

Electrooptical effects in silicon

IEEE journal of quantum electronics, 1987-01, Vol.23 (1), p.123-129

1987

Link zum Volltext
IEEE_Xplore

Population-inversion and gain estimates for a semiconductor TASER

IEEE journal of quantum electronics, 2001-01, Vol.37 (1), p.153-158

2001

Link zum Volltext
IEEE_Xplore

Electroluminescence efficiency enhancement using metal nanoparticles

Applied physics letters, 2008-07, Vol.93 (2), p.021120-021120-3

2008

Link zum Volltext

Verfügbarkeit prüfen

Franz-Keldysh electro-absorption modulation in germanium-tin alloys

Journal of applied physics, 2012-06, Vol.111 (12)

2012

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 230

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(171)
Mit Volltextzugriff
(220)

Publikationsform

Artikel
(200)
Tagungsberichte
(30)

Sprache

Englisch
(226)
Japanisch
(46)

Erscheinungsjahr

n.n

Thema

Science & Technology
(146)
Physical Sciences
(126)
Physics
(105)
Physics, Applied
(86)
Optics
(64)
Technology
(64)
Engineering
(53)
Engineering, Electrical & Electronic
(53)
Exact Sciences And Technology
(49)
Silicon
(26)
Applied Sciences
(25)
Electronics
(21)
Materials Science
(18)
Materials Science, Multidisciplinary
(14)
Optical Waveguides
(14)
Fundamental Areas Of Phenomenology
(13)
Circuit Properties
(12)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(12)
Electric, Optical And Optoelectronic Circuits
(12)
Photonic Band Gap
(12)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

The Past, Present, and Future of Silicon Photonics

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

Germanium as a material for stimulated Brillouin scattering in the mid-infrared

Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Practical enhancement of photoluminescence by metal nanoparticles

Design and simulation of silicon microring optical routing switches

Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

High efficiency thin-film crystalline Si/Ge tandem solar cell

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Practical limits of absorption enhancement near metal nanoparticles

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

Synthesis of dual-microring-resonator cross-connect filters

Silicon-based optoelectronics

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1-14- \mu\hbox Infrared Wavelength Range

SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electrooptical effects in silicon

Population-inversion and gain estimates for a semiconductor TASER

Electroluminescence efficiency enhancement using metal nanoparticles

Franz-Keldysh electro-absorption modulation in germanium-tin alloys

Suchergebnisse filtern