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Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin–orbit interaction

Journal of applied physics, 2021-10, Vol.130 (13)

2021

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Superconductor-semiconductor hybrid capacitance with a nonlinear charge–voltage profile

Journal of physics. D, Applied physics, 2024-01, Vol.57 (2), p.25301

2024

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Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn‑, V‑, and Fe-Doped WSe2

ACS applied materials & interfaces, 2024-01, Vol.16 (4), p.4991-4998

2024

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Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

ACS nano, 2024-05, Vol.18 (21), p.13506-13516

2024

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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301

2012

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Skyrmion electrical detection with the use of three-dimensional Topological Insulators/Ferromagnetic bilayers

Scientific reports, 2017-12, Vol.7 (1), p.17871-18, Article 17871

2017

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2D ferromagnetism at finite temperatures under quantum scrutiny

Applied physics letters, 2020-08, Vol.117 (5)

2020

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Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Journal of applied physics, 2010-01, Vol.107 (2)

2010

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Impact of passivation on the Dirac cones of 2D topological insulators

Journal of applied physics, 2022-06, Vol.131 (23)

2022

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Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields

Journal of physics. Condensed matter, 2018-07, Vol.30 (27), p.275801-275801

2018

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Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors

Journal of applied physics, 2018-10, Vol.124 (14)

2018

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Image-force barrier lowering in top- and side-contacted two-dimensional materials

Solid-state electronics, 2022-12, Vol.198, p.108458, Article 108458

2022

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Impact of field-induced quantum confinement in tunneling field-effect devices

Applied physics letters, 2011-04, Vol.98 (14), p.143503-143503-3

2011

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Fabry–Pérot interferometry with gate-tunable 3D topological insulator nanowires

Nanotechnology, 2021-10, Vol.32 (43), p.435002

2021

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Skyrmion spin transfer torque due to current confined in a nanowire

Physical review. B, 2020-09, Vol.102 (12), p.1, Article 125436

2020

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Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits

Superconductor science & technology, 2020-12, Vol.33 (12), p.125002

2020

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Progress in Spin Logic Devices Based on Domain-Wall Motion

Micromachines (Basel), 2024-05, Vol.15 (6), p.696

2024

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Au-MoS2 contacts: Quantum transport simulations using a continuum description

Journal of applied physics, 2023-09, Vol.134 (9)

2023

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Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires

Journal of physics. Condensed matter, 2016-09, Vol.28 (36), p.365302-365302

2016

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Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

2d materials, 2019-02, Vol.6 (2), p.25011

2019

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Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering

Microelectronic engineering, 2017-01, Vol.167, p.37-41

2017

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Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2070-2077

2012

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Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy

Physical review research, 2021-10, Vol.3 (4), Article 043024

2021

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Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach

Journal of applied physics, 2011-06, Vol.109 (12), p.124503-124503-12

2011

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Low-field mobility in ultrathin silicon nanowire junctionless transistors

Applied physics letters, 2011-12, Vol.99 (23), p.233509-233509-3

2011

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Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin–orbit interaction

Superconductor-semiconductor hybrid capacitance with a nonlinear charge–voltage profile

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn‑, V‑, and Fe-Doped WSe2

Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Skyrmion electrical detection with the use of three-dimensional Topological Insulators/Ferromagnetic bilayers

2D ferromagnetism at finite temperatures under quantum scrutiny

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Impact of passivation on the Dirac cones of 2D topological insulators

Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields

Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors

Image-force barrier lowering in top- and side-contacted two-dimensional materials

Impact of field-induced quantum confinement in tunneling field-effect devices

Fabry–Pérot interferometry with gate-tunable 3D topological insulator nanowires

Skyrmion spin transfer torque due to current confined in a nanowire

Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits

Progress in Spin Logic Devices Based on Domain-Wall Motion

Au-MoS2 contacts: Quantum transport simulations using a continuum description

Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires

Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach

Low-field mobility in ultrathin silicon nanowire junctionless transistors

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