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Antarctic balloon-borne detector of high-energy cosmic rays (SPHERE project)

Radiation physics and chemistry (Oxford, England : 1993), 2006-08, Vol.75 (8), p.887-890

2006

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Experiment SPHERE status 2008

Nuclear physics. Section B, Proceedings supplement, 2009, Vol.196, p.403-406

2009

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Experiment SPHERE status – 2006 and CR composition determination by means of Cherenkov light LDF

Nuclear physics. Section B, Proceedings supplement, 2008, Vol.175, p.194-197

2008

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Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

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IEEE_Xplore

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.73-77

2017

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IEEE_Xplore

2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1303-1307

2018

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IEEE_Xplore

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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IEEE_Xplore

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1372-1379

2009

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IEEE_Xplore

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1197-1202

2017

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IEEE_Xplore

Experimental study of anode processes in plasma arc cutting

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.65202-1-11

2013

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Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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Subthreshold Mobility in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1861-1865

2016

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IEEE_Xplore

Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.27-30

2016

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IEEE_Xplore

Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.365-368

2015

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IEEE_Xplore

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

2011 IEEE International Solid-State Circuits Conference, 2011, p.58-60

2011

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IEEE_Xplore

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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IEEE_Xplore

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.233-236

2009

Link zum Volltext
IEEE_Xplore

A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency

2008 IEEE Radio Frequency Integrated Circuits Symposium, 2008, p.141-144

2008

Link zum Volltext
IEEE_Xplore

Measurement of plasma and particle velocities in a thermal plasma jet by correlation and PIV methods

2008 IEEE 35th International Conference on Plasma Science, 2008, p.1-1

2008

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IEEE_Xplore

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

IEEE transactions on nuclear science, 1999-02, Vol.46 (1), p.53-58

1999

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Circulating tumor cells examination in patients operated for renal tumor – initial experience

European urology supplements : official journal of the European Association of Urology, 2016-12, Vol.15 (11), p.e1368-e1369

2016

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Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition

Applied surface science, 1998-05, Vol.127, p.514-519

1998

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Towards universal and voltage-scalable high gate- and drain-voltage MOSFETs in CMOS

2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.315-318

2009

Link zum Volltext
IEEE_Xplore

18 - Circulating tumor cells examination in patients operated for renal tumor – initial experience

European urology supplements : official journal of the European Association of Urology, 2016-12, Vol.15 (11), p.e1368-e1369

2016

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X-ray detection with multi-anode sawtooth silicon drift detectors

IEEE transactions on nuclear science, 2000-06, Vol.47 (3), p.750-755

2000

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IEEE_Xplore

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Antarctic balloon-borne detector of high-energy cosmic rays (SPHERE project)

Experiment SPHERE status 2008

Experiment SPHERE status – 2006 and CR composition determination by means of Cherenkov light LDF

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Experimental study of anode processes in plasma arc cutting

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

Subthreshold Mobility in AlGaN/GaN HEMTs

Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region

Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency

Measurement of plasma and particle velocities in a thermal plasma jet by correlation and PIV methods

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

Circulating tumor cells examination in patients operated for renal tumor – initial experience

Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition

Towards universal and voltage-scalable high gate- and drain-voltage MOSFETs in CMOS

18 - Circulating tumor cells examination in patients operated for renal tumor – initial experience

X-ray detection with multi-anode sawtooth silicon drift detectors

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