UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 29

Sortiert nach

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

Link zum Volltext
IEEE_Xplore

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

Link zum Volltext
IEEE_Xplore

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1987-1992

2014

Link zum Volltext
IEEE_Xplore

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2549-2554

2015

Link zum Volltext
IEEE_Xplore

Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

IET power electronics, 2015-12, Vol.8 (12), p.2322-2328

2015

Link zum Volltext

Verfügbarkeit prüfen

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

Link zum Volltext
IEEE_Xplore

Modelling 2DEG charges in AlGaN/GaN heterostructures

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.363-366

2012

Link zum Volltext

Verfügbarkeit prüfen

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1197-1202

2017

Link zum Volltext
IEEE_Xplore

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

Link zum Volltext

Verfügbarkeit prüfen

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1372-1379

2009

Link zum Volltext
IEEE_Xplore

Subthreshold Mobility in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1861-1865

2016

Link zum Volltext
IEEE_Xplore

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

Link zum Volltext
IEEE_Xplore

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

2011 IEEE International Solid-State Circuits Conference, 2011, p.58-60

2011

Link zum Volltext
IEEE_Xplore

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.233-236

2009

Link zum Volltext
IEEE_Xplore

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

2014 IEEE International Electron Devices Meeting, 2014, p.17.1.1-17.1.4

2014

Link zum Volltext
IEEE_Xplore

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.25.5.1-25.5.4

2017

Link zum Volltext
IEEE_Xplore

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

IEEE transactions on nuclear science, 1999-02, Vol.46 (1), p.53-58

1999

Link zum Volltext

Verfügbarkeit prüfen

Smart Power Devices Nanotechnology

Nanoelectronics, 2017, p.163-204

2017

Link zum Volltext

Verfügbarkeit prüfen

Asymmetry and Frequency Characteristics of Instabilities in a Thermal Plasma Jet

IEEE transactions on plasma science, 2012-11, Vol.40 (11), p.2795-2799

2012

Link zum Volltext
IEEE_Xplore

Analysis of Thermal Plasma Dynamics in 3-D Using Tomographical Reconstruction and Wavelet Analysis

IEEE transactions on plasma science, 2011-11, Vol.39 (11), p.2850-2851

2011

Link zum Volltext
IEEE_Xplore

Two-Dimensional Complex FFT Analysis of Oscillations in a Thermal Plasma Jet

IEEE transactions on plasma science, 2011-11, Vol.39 (11), p.2848-2849

2011

Link zum Volltext
IEEE_Xplore

The clinical value of circulating free tumor DNA in testicular germ cell tumor patients

Urologic oncology, 2022-09, Vol.40 (9), p.412.e15-412.e24

2022

Link zum Volltext

Verfügbarkeit prüfen

Platinum and platinum oxide nanoparticles generated by unipolar spark discharge

Journal of aerosol science, 2020-03, Vol.141, p.105502, Article 105502

2020

Link zum Volltext

Verfügbarkeit prüfen

Tomographic Measurements of Temperature Fluctuations in an Air Plasma Cutting Torch

Plasma chemistry and plasma processing, 2017-05, Vol.37 (3), p.689-699

2017

Link zum Volltext

Verfügbarkeit prüfen

Suppression of Instabilities in Thermal Plasma Jet by Additional Arc Current Modulation

IEEE transactions on plasma science, 2014-10, Vol.42 (10), p.2720-2721

2014

Link zum Volltext
IEEE_Xplore

1 – 25 von 29

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(21)
Mit Volltextzugriff
(29)

Publikationsform

Sprache

Englisch
(29)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(20)
Engineering
(13)
Physical Sciences
(13)
Physics
(13)
Technology
(13)
Engineering, Electrical & Electronic
(11)
Gallium Nitride
(9)
Hemts
(9)
Aluminum Gallium Nitride
(8)
Modfets
(8)
Physics, Applied
(6)
Physics, Fluids & Plasmas
(6)
Logic Gates
(5)
Transistors
(5)
Exact Sciences And Technology
(4)
High Electron Mobility Transistors
(4)
Oscillators
(4)
Plasmas
(4)
Thermal Plasmas
(4)
Aluminum Gallium Nitrides
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Modelling 2DEG charges in AlGaN/GaN heterostructures

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

Subthreshold Mobility in AlGaN/GaN HEMTs

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

Smart Power Devices Nanotechnology

Asymmetry and Frequency Characteristics of Instabilities in a Thermal Plasma Jet

Analysis of Thermal Plasma Dynamics in 3-D Using Tomographical Reconstruction and Wavelet Analysis

Two-Dimensional Complex FFT Analysis of Oscillations in a Thermal Plasma Jet

The clinical value of circulating free tumor DNA in testicular germ cell tumor patients

Platinum and platinum oxide nanoparticles generated by unipolar spark discharge

Tomographic Measurements of Temperature Fluctuations in an Air Plasma Cutting Torch

Suppression of Instabilities in Thermal Plasma Jet by Additional Arc Current Modulation

Suchergebnisse filtern