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GaAs interfacial self-cleaning by atomic layer deposition

Applied physics letters, 2008-02, Vol.92 (7), p.071901-071901-3

2008

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Order parameter dependence of the viscosity coefficients of a biaxial nematic liquid crystal

The European physical journal. E, Soft matter and biological physics, 2011-10, Vol.34 (10), p.109-109, Article 109

2011

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Continuum theory for nematic liquid crystals with tensorial order

Journal of non-Newtonian fluid mechanics, 2004-05, Vol.119 (1), p.51-59

2004

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Electric field induced order reconstruction in a nematic cell

The European physical journal. E, Soft matter and biological physics, 2004, Vol.13 (1), p.61-71

2004

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Reorientational dynamics of conjugated nematic point defects

Liquid crystals, 2010-06, Vol.37 (6-7), p.785-797

2010

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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Applied physics letters, 2007-10, Vol.91 (16)

2007

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Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

Applied physics letters, 2008-09, Vol.93 (11)

2008

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Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1083-1086

2011

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Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Applied physics letters, 2009-04, Vol.94 (16)

2009

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Shear-induced biaxiality in nematic polymers

Journal of non-Newtonian fluid mechanics, 2000-05, Vol.90 (2), p.283-297

2000

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Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Applied physics letters, 2008-09, Vol.93 (12)

2008

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Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2599-2606

2010

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Performance enhancement of n-channel inversion type In{sub x}Ga{sub 1-x}As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Applied physics letters, 2008-09, Vol.93 (12)

2008

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Style et subjectivité

Cahiers de philosophie de l'université de Caen, 2021-09 (58)

2021

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On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

Applied physics letters, 2011-05, Vol.98 (19)

2011

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Analysis of Compressively Strained GaInAsP-InP Quantum-Wire Electro-Absorption Modulators

IEEE journal of quantum electronics, 2007-12, Vol.43 (12), p.1198-1203

2007

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Dynamics of dissipative ordered fluids

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 2001-09, Vol.64 (3 Pt 1), p.031705-031705, Article 031705

2001

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On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

Applied physics letters, 2011-05, Vol.98 (19), p.193501-193501-3

2011

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Extraction of the Effective Mobility of [ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}] @@iMOSFETs@

IEEE electron device letters, 2009-04, Vol.30 (4), p.316-318

2009

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Molecular reorientation of a nematic glass by laser-induced heat flow

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 1999-08, Vol.60 (2 Pt B), p.1792-1798

1999

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Extraction of the Effective Mobility of hbox In 0.53 hbox Ga 0.47 hbox As MOSFETs

IEEE electron device letters, 2009-01, Vol.30 (4)

2009

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Detection of Ga suboxides and their impact on III-V passivationand Fermi-level pinning

Applied physics letters, 2009-04, Vol.94 (16), p.162101-162101-3

2009

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Performance enhancement of n -channel inversion type In x Ga 1 − x As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Applied physics letters, 2008-09, Vol.93 (12), p.122109-122109-3

2008

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Comparison of n -type and p -type GaAs oxide growth and its effectson frequency dispersion characteristics

Applied physics letters, 2008-09, Vol.93 (11), p.113506-113506-3

2008

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Remote phonon and surface roughness limited universal electron mobility of In sub(0.53Ga) sub(0).47As surface channel MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1083-1086

2011

Volltextzugriff (PDF)

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GaAs interfacial self-cleaning by atomic layer deposition

Order parameter dependence of the viscosity coefficients of a biaxial nematic liquid crystal

Continuum theory for nematic liquid crystals with tensorial order

Electric field induced order reconstruction in a nematic cell

Reorientational dynamics of conjugated nematic point defects

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Shear-induced biaxiality in nematic polymers

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics

Performance enhancement of n-channel inversion type In{sub x}Ga{sub 1-x}As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Style et subjectivité

On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

Analysis of Compressively Strained GaInAsP-InP Quantum-Wire Electro-Absorption Modulators

Dynamics of dissipative ordered fluids

On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

Extraction of the Effective Mobility of [ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}] @@iMOSFETs@

Molecular reorientation of a nematic glass by laser-induced heat flow

Extraction of the Effective Mobility of hbox In 0.53 hbox Ga 0.47 hbox As MOSFETs

Detection of Ga suboxides and their impact on III-V passivationand Fermi-level pinning

Performance enhancement of n -channel inversion type In x Ga 1 − x As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Comparison of n -type and p -type GaAs oxide growth and its effectson frequency dispersion characteristics

Remote phonon and surface roughness limited universal electron mobility of In sub(0.53Ga) sub(0).47As surface channel MOSFETs

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