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From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

Applied physics letters, 2007-12, Vol.91 (25), p.251902-251902-3

2007

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Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

Nano letters, 2010-08, Vol.10 (8), p.2939-2943

2010

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Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon

Nano letters, 2016-06, Vol.16 (6), p.3426-3433

2016

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Room-Temperature Photodetection Dynamics of Single GaN Nanowires

Nano letters, 2012-01, Vol.12 (1), p.172-176

2012

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Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

Nano letters, 2010-09, Vol.10 (9), p.3545-3550

2010

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Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

Nano letters, 2012-11, Vol.12 (11), p.5691-5696

2012

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Identification of III–N nanowire growth kinetics via a marker technique

Nanotechnology, 2010-07, Vol.21 (29), p.295605-295605

2010

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Rolled-up micro- and nanotubes from single-material thin films

Applied physics letters, 2006-11, Vol.89 (22), p.223109-223109-3

2006

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Light emission and wave guiding of quantum dots in a tube

Applied physics letters, 2006-03, Vol.88 (11), p.111120-111120-3

2006

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Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Nanotechnology, 2012-11, Vol.23 (45), p.455205-455205

2012

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Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

Applied physics letters, 2013-05, Vol.102 (21)

2013

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Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Applied physics letters, 2012-12, Vol.101 (24)

2012

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On-chip Si/SiOx microtube refractometer

Applied physics letters, 2008-09, Vol.93 (9)

2008

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Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Journal of crystal growth, 2013-02, Vol.364, p.118-122

2013

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Shape evolution of InAs quantum dots during overgrowth

Journal of crystal growth, 2003-03, Vol.249 (3), p.416-421

2003

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Toward Quantitative Measurements of Piezoelectricity in III‑N Semiconductor Nanowires

ACS applied nano materials, 2021-01, Vol.4 (1), p.43-52

2021

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Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots

Physical review letters, 2006-06, Vol.96 (22), p.226106-226106, Article 226106

2006

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Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs∕GaAs(001) and Ge∕Si(001)

Applied physics letters, 2004-12, Vol.85 (23), p.5673-5675

2004

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Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Journal of applied physics, 2014-07, Vol.116 (2)

2014

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Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

Applied physics letters, 2008-11, Vol.93 (18), p.183109-183109-3

2008

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Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Applied physics letters, 2011-10, Vol.99 (14), p.141914-141914-3

2011

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Hierarchical self-assembly of GaAs/AlGaAs quantum dots

Physical review letters, 2004-04, Vol.92 (16), p.166104-166104, Article 166104

2004

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The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures

Nanotechnology, 2009-07, Vol.20 (29), p.295706-295706 (5)

2009

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Polarization fields in GaN/AlN nanowire heterostructures studied by off-axis holography

Journal of physics. Conference series, 2013-11, Vol.471 (1), p.12019-4

2013

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AlGaN/AlN quantum dots for UV light emitters

Physica status solidi. C, 2013-03, Vol.10 (3), p.285-288

2013

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From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon

Room-Temperature Photodetection Dynamics of Single GaN Nanowires

Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

Identification of III–N nanowire growth kinetics via a marker technique

Rolled-up micro- and nanotubes from single-material thin films

Light emission and wave guiding of quantum dots in a tube

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

On-chip Si/SiOx microtube refractometer

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Shape evolution of InAs quantum dots during overgrowth

Toward Quantitative Measurements of Piezoelectricity in III‑N Semiconductor Nanowires

Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots

Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs∕GaAs(001) and Ge∕Si(001)

Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Hierarchical self-assembly of GaAs/AlGaAs quantum dots

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures

Polarization fields in GaN/AlN nanowire heterostructures studied by off-axis holography

AlGaN/AlN quantum dots for UV light emitters

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