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Concave and Convex Structures for Advanced 3-D NAND Flash Memory Technology

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2810-2814

2024

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IEEE_Xplore

A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6112-6117

2021

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IEEE_Xplore

An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied

Electronics (Basel), 2023-07, Vol.12 (13), p.2945

2023

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A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied

Electronics (Basel), 2022-07, Vol.11 (13), p.2038

2022

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An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Electronics (Basel), 2024-03, Vol.13 (5), p.889

2024

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Alternate Pulse Scheme in a Hardware Neural Network for Reducing the Influence of Asymmetry on Synaptic Weight Updating

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(1), 91, pp.119-126

2020

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The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4313-4319

2018

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IEEE_Xplore

Vertical Channel NAND Flash Structure using DSCG(Double-Side-Control-Gate) to Reduce Cell to Cell Interference

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(6), 84, pp.714-722

2018

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An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

Electronics (Basel), 2024-01, Vol.13 (2), p.451

2024

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Inverse Resistance Change Cr2Ge2Te6‑Based PCRAM Enabling Ultralow-Energy Amorphization

ACS applied materials & interfaces, 2018-01, Vol.10 (3), p.2725-2734

2018

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A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories

IEEE access, 2022, Vol.10, p.53513-53521

2022

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Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of Substrate

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1741-1746

2019

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IEEE_Xplore

Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory

Electronics (Basel), 2021-11, Vol.10 (21), p.2632

2021

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Innovative Structure to Improve Erase Speed in 3-D nand Flash Memory With Cell-on-Peri (COP) Applied

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4883-4888

2022

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IEEE_Xplore

Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase

Materials science in semiconductor processing, 2021-10, Vol.133, p.105961, Article 105961

2021

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Simulation of residual stress and its impact on a poly-silicon channel for three-dimensional, stacked, vertical-NAND flash memories

Journal of the Korean Physical Society, 2017, 70(12), , pp.1041-1048

2017

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Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(1), 91, pp.8-11

2020

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Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

Electronics (Basel), 2021-08, Vol.10 (15), p.1828

2021

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Aspect ratio-dependent leaning of a block array in 3D NAND flash memory

Microelectronics and reliability, 2024-07, Vol.158, p.115419, Article 115419

2024

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Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

ACS applied materials & interfaces, 2022-10, Vol.14 (39), p.44604-44613

2022

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Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Materials research bulletin, 2021-12, Vol.144, p.111492, Article 111492

2021

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Two phase-change memory (2-PCM) neurons for implementing a backpropagation algorithm

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGB07

2020

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The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.382-387

2019

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Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.104301-1-104301-4

2014

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Concave and Convex Structures for Advanced 3-D NAND Flash Memory Technology

A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory

An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied

A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Alternate Pulse Scheme in a Hardware Neural Network for Reducing the Influence of Asymmetry on Synaptic Weight Updating

The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures

Vertical Channel NAND Flash Structure using DSCG(Double-Side-Control-Gate) to Reduce Cell to Cell Interference

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

Inverse Resistance Change Cr2Ge2Te6‑Based PCRAM Enabling Ultralow-Energy Amorphization

A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories

Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of Substrate

Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory

Innovative Structure to Improve Erase Speed in 3-D nand Flash Memory With Cell-on-Peri (COP) Applied

Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse

Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase

Simulation of residual stress and its impact on a poly-silicon channel for three-dimensional, stacked, vertical-NAND flash memories

Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

Aspect ratio-dependent leaning of a block array in 3D NAND flash memory

Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Two phase-change memory (2-PCM) neurons for implementing a backpropagation algorithm

The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS

Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature

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