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Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure

Materials & design, 2023-01, Vol.225, p.111484, Article 111484

2023

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Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes

IEEE transactions on power electronics, 2018-03, Vol.33 (3), p.1874-1877

2018

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Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme

Journal of Power Electronics, 2020, 20(1), , pp.319-328

2020

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An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1223-1229

2015

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Corrigendum to “Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure” [Mater. Design 225 (2023) 111484]

Materials & design, 2023-02, Vol.226, p.111645, Article 111645

2023

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Flow and heat transfer behaviors of phase change material slurries in a horizontal circular tube

International journal of heat and mass transfer, 2007-07, Vol.50 (13), p.2480-2491

2007

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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

IET power electronics, 2021-08, Vol.14 (11), p.2021-2026

2021

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Thermal stability of composite phase change material microcapsules incorporated with silver nano-particles

Polymer (Guilford), 2007-05, Vol.48 (11), p.3317-3323

2007

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Enhanced Photocatalytic Properties of PET Filaments Coated with Ag-N Co-Doped TiO2 Nanoparticles Sensitized with Disperse Blue Dyes

Nanomaterials (Basel, Switzerland), 2020-05, Vol.10 (5), p.987

2020

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Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

Applied sciences, 2023-01, Vol.13 (2), p.1112

2023

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Investigation of SiC trench MOSFET with floating islands

IET power electronics, 2016-10, Vol.9 (13), p.2492-2499

2016

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Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices

IEEE electron device letters, 2016-08, Vol.37 (8), p.1037-1040

2016

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Flexible unimodal strain sensors for human motion detection and differentiation

Npj flexible electronics, 2022-08, Vol.6 (1), p.1-10, Article 74

2022

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Unveil the Full Potential of Integrated-Back-Contact Perovskite Solar Cells Using Numerical Simulation

ACS applied energy materials, 2018-03, Vol.1 (3), p.970-975

2018

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Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

IEEE access, 2020, Vol.8, p.104503-104510

2020

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Heat transfer of microencapsulated PCM slurry flow in a circular tube

AIChE journal, 2008-04, Vol.54 (4), p.1110-1120

2008

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Novel modulation method for torque ripple suppression of brushless DC motors based on SIMO DC–DC converter

Journal of Power Electronics, 2020, 20(3), , pp.720-730

2020

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Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

IEEE access, 2020, Vol.8, p.93039-93047

2020

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Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Nanomaterials (Basel, Switzerland), 2020-07, Vol.10 (7), p.1332

2020

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Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

Solid-state electronics, 2015-01, Vol.103, p.83-89

2015

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4H-SiC trench gate MOSFETs with field plate termination

Science China. Technological sciences, 2014-10, Vol.57 (10), p.2044-2049

2014

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La3+ and Al3+ loaded D151 as salt‐resistant resins for efficient adsorption of glyphosate: Effects of ionic radius

Journal of applied polymer science, 2024-01, Vol.141 (1)

2024

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Preparation and characterization of cross-linked polyurethane shell microencapsulated phase change materials by interfacial polymerization

Materials letters, 2018-01, Vol.211, p.36-39

2018

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Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Science China. Technological sciences, 2015-08, Vol.58 (8), p.1369-1374

2015

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La 3+ and Al 3+ loaded D151 as salt‐resistant resins for efficient adsorption of glyphosate: Effects of ionic radius

Journal of applied polymer science, 2024-01, Vol.141 (1)

2024

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Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure

Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes

Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme

An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes

Corrigendum to “Highly efficient acoustic absorber designed by backing cavity-like and filled-microperforated plate-like structure” [Mater. Design 225 (2023) 111484]

Flow and heat transfer behaviors of phase change material slurries in a horizontal circular tube

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Thermal stability of composite phase change material microcapsules incorporated with silver nano-particles

Enhanced Photocatalytic Properties of PET Filaments Coated with Ag-N Co-Doped TiO2 Nanoparticles Sensitized with Disperse Blue Dyes

Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

Investigation of SiC trench MOSFET with floating islands

Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices

Flexible unimodal strain sensors for human motion detection and differentiation

Unveil the Full Potential of Integrated-Back-Contact Perovskite Solar Cells Using Numerical Simulation

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

Heat transfer of microencapsulated PCM slurry flow in a circular tube

Novel modulation method for torque ripple suppression of brushless DC motors based on SIMO DC–DC converter

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

4H-SiC trench gate MOSFETs with field plate termination

La3+ and Al3+ loaded D151 as salt‐resistant resins for efficient adsorption of glyphosate: Effects of ionic radius

Preparation and characterization of cross-linked polyurethane shell microencapsulated phase change materials by interfacial polymerization

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

La 3+ and Al 3+ loaded D151 as salt‐resistant resins for efficient adsorption of glyphosate: Effects of ionic radius

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