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Output Capacitance Loss of GaN HEMTs in Steady-State Switching

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.5547-5557

2024

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8442-8471

2023

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Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz

IEEE transactions on power electronics, 2023-05, Vol.38 (5), p.1-10

2023

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Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

IEEE transactions on power electronics, 2023-11, Vol.38 (11), p.1-6

2023

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True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

IEEE electron device letters, 2021-04, Vol.42 (4), p.505-508

2021

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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

IEEE electron device letters, 2023-02, Vol.44 (2), p.217-220

2023

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Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.5576-5589

2024

Volltextzugriff (PDF)

Minimizing Output Capacitance Loss in GaN Power HEMT

IEEE transactions on power electronics, 2024-08, Vol.39 (8), p.9120-9126

2024

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Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage

IEEE transactions on power electronics, 2023-01, Vol.38 (1), p.435-446

2023

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Dynamic RON Free 1.2-kV Vertical GaN JFET

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.720-726

2024

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Dynamic R ON Free 1.2-kV Vertical GaN JFET

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.720-726

2024

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Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 2024, p.749-753

2024

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Robust Avalanche in 1.7 kV Vertical GaN Diodes with a Single-Implant Bevel Edge Termination

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1

2023

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Optical scanning Fourier ptychographic microscopy

Applied optics (2004), 2021-02, Vol.60 (4), p.A243-A249

2021

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Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.633-639

2023

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GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure?

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.667-672

2023

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Impact of Conduction Current on Output Capacitance Loss in GaN HEMTs

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.2533-2537

2023

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Investigation on Physical Origins of Output Capacitance Loss in Cascode GaN HEMTs

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.651-655

2023

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Overvoltage Ruggedness and Dynamic Breakdown Voltage of P-Gate GaN HEMTs in High-Frequency Switching up to Megahertz

2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, p.175-180

2022

Volltextzugriff (PDF)

Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.283-286

2024

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Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 2024, p.761-766

2024

Volltextzugriff (PDF)

Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.20-23

2023

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Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 2021, p.363-369

2021

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Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.661-666

2023

Volltextzugriff (PDF)

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Output Capacitance Loss of GaN HEMTs in Steady-State Switching

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Minimizing Output Capacitance Loss in GaN Power HEMT

Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage

Dynamic RON Free 1.2-kV Vertical GaN JFET

Dynamic R ON Free 1.2-kV Vertical GaN JFET

Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability

Robust Avalanche in 1.7 kV Vertical GaN Diodes with a Single-Implant Bevel Edge Termination

Optical scanning Fourier ptychographic microscopy

Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure?

Impact of Conduction Current on Output Capacitance Loss in GaN HEMTs

Investigation on Physical Origins of Output Capacitance Loss in Cascode GaN HEMTs

Overvoltage Ruggedness and Dynamic Breakdown Voltage of P-Gate GaN HEMTs in High-Frequency Switching up to Megahertz

Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching

Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses

Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events

Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit

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