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Ab Initio Study of Ferromagnetism in Mn‐doped AlGaP2

Physica status solidi. C, 2017-11, Vol.14 (11), p.n/a

2017

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Chalcopyrite Al(Ga, Mn)As2 and AlGa(As, P) Quaternary Semiconductor: A First-principle Study

Journal of Nano- and Electronic Physics, 2019-04, Vol.11 (2), p.2006-2006-5

2019

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Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (8), p.1651

2013

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Improved electrical conductivity of a non-covalently dispersed graphene–carbon nanotube film by chemical p-type doping

Carbon (New York), 2012-03, Vol.50 (3), p.943-951

2012

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Investigation of the transition between glow and streamer discharges in atmospheric air

Plasma sources science & technology, 2006-08, Vol.15 (3), p.416-420

2006

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Highly efficient inverted polymer solar cells with reduced graphene-oxide-zinc-oxide nanocomposites buffer layer

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8)

2016

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Halogen plasma erosion resistance of rare earth oxide films deposited on plasma sprayed alumina coating by aerosol deposition

Journal of the European Ceramic Society, 2012-08, Vol.32 (10), p.2451-2457

2012

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Effect on N Defect in Cu-doped III-nitride Semiconductors

Journal of magnetics, 2011-12, Vol.16 (4), p.332-336

2011

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Analysis of sterilization effect by pulsed dielectric barrier discharge

Journal of electrostatics, 2006, Vol.64 (1), p.17-22

2006

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Low temperature fabrication of metal oxide thin film transistors formed by a heated aqueous precursor solution

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1), p.10304

2016

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Ferromagnetism in Mn-doped Chalcopyrite AlGaP2 Semiconductor

Journal of Nano- and Electronic Physics, 2016, Vol.8 (2), p.2011-2011-5

2016

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Nonhydrolytic alkyl halide elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4), p.40306-1-040306-3

2014

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Effects of aluminum cathodes prepared by ion-beam-assisted deposition in organic light-emitting devices

Applied physics letters, 2004-08, Vol.85 (6), p.1051-1053

2004

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Role of a [6,6]-phenyl C61 butyric acid methyl ester homologue buffer layer for bulk-heterojunction solar cells

Applied surface science, 2013-10, Vol.283, p.33-37

2013

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Non-hydrolytic ester-elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Journal of sol-gel science and technology, 2012-10, Vol.64 (1), p.257-263

2012

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Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8), p.080202-080202-3

2011

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Homogeneous liquid crystal alignment on inorganic–organic hybrid silica thin films derived by the sol–gel method

Soft matter, 2012, Vol.8 (5), p.1437-1442

2012

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Observation of the hollow cathode effect from a dielectric cathode

Journal of physics. D, Applied physics, 2010-12, Vol.43 (49), p.495205-495205

2010

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Surface modification for adhesion enhancement of PET-laminated steel using atmospheric pressure plasma

Surface & coatings technology, 2007-02, Vol.201 (9), p.4948-4952

2007

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Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7), p.070201-070201-3

2011

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Improvement of plasma uniformity using ZnO-coated dielectric barrier discharge in open air

Applied physics letters, 2006-08, Vol.89 (8), p.081501-081501-3

2006

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Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.40201

2012

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Improvement of the vacuum ultraviolet efficiency of low pressure Xe discharge by nitrogen admixture

Applied physics letters, 2008-02, Vol.92 (6), p.061502-061502-3

2008

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Improved stability of organic light-emitting diode with aluminum cathodes prepared by ion beam assisted deposition

Science and technology of advanced materials, 2005-01, Vol.6 (1), p.97-102

2005

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Ab Initio Study of Ferromagnetism in Mn‐doped AlGaP2

Chalcopyrite Al(Ga, Mn)As2 and AlGa(As, P) Quaternary Semiconductor: A First-principle Study

Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

Improved electrical conductivity of a non-covalently dispersed graphene–carbon nanotube film by chemical p-type doping

Investigation of the transition between glow and streamer discharges in atmospheric air

Highly efficient inverted polymer solar cells with reduced graphene-oxide-zinc-oxide nanocomposites buffer layer

Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film

Halogen plasma erosion resistance of rare earth oxide films deposited on plasma sprayed alumina coating by aerosol deposition

Effect on N Defect in Cu-doped III-nitride Semiconductors

Analysis of sterilization effect by pulsed dielectric barrier discharge

Low temperature fabrication of metal oxide thin film transistors formed by a heated aqueous precursor solution

Ferromagnetism in Mn-doped Chalcopyrite AlGaP2 Semiconductor

Nonhydrolytic alkyl halide elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Effects of aluminum cathodes prepared by ion-beam-assisted deposition in organic light-emitting devices

Role of a [6,6]-phenyl C61 butyric acid methyl ester homologue buffer layer for bulk-heterojunction solar cells

Non-hydrolytic ester-elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

Homogeneous liquid crystal alignment on inorganic–organic hybrid silica thin films derived by the sol–gel method

Observation of the hollow cathode effect from a dielectric cathode

Surface modification for adhesion enhancement of PET-laminated steel using atmospheric pressure plasma

Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

Improvement of plasma uniformity using ZnO-coated dielectric barrier discharge in open air

Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation

Improvement of the vacuum ultraviolet efficiency of low pressure Xe discharge by nitrogen admixture

Improved stability of organic light-emitting diode with aluminum cathodes prepared by ion beam assisted deposition

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