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Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.42-59

2010

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Visible Light-Emitting Diodes With Thin-Film-Flip- Chip-Based Wafer-Level Chip-Scale Package Technology Using Anisotropic Conductive Film Bonding

IEEE electron device letters, 2015-07, Vol.36 (7), p.702-704

2015

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Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package

IEEE photonics technology letters, 2016-09, Vol.28 (18), p.1956-1959

2016

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Ohmic and degradation mechanisms of Ag contacts on p -type GaN

Applied physics letters, 2005-02, Vol.86 (6), p.062104-062104-3

2005

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Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

Optics express, 2018-04, Vol.26 (9), p.11194-11200

2018

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Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system

Semiconductor science and technology, 2009-09, Vol.24 (9), p.092001-092001 (4)

2009

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Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.42102-1-042102-5

2015

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Cu -doped indium oxide∕Ag ohmic contacts for high-power flip-chip light-emitting diodes

Applied physics letters, 2005-02, Vol.86 (6)

2005

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Highly low resistance and transparent Ni/ZnO ohmic contacts to p -type GaN

Applied physics letters, 2003-07, Vol.83 (3), p.479-481

2003

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Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentation

Optics express, 2018-10, Vol.26 (22), p.28634-28640

2018

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Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

IEEE photonics technology letters, 2011-12, Vol.23 (23), p.1784-1786

2011

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Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes

Applied physics letters, 2005-05, Vol.86 (21)

2005

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Formation of low resistance and transparent ohmic contacts to p -type GaN using Ni–Mg solid solution

Applied physics letters, 2003-10, Vol.83 (17), p.3513-3515

2003

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Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Applied physics letters, 2006-03, Vol.88 (10), p.103505-103505-3

2006

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Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Applied physics letters, 2003-12, Vol.83 (24), p.4990-4992

2003

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Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer

Japanese Journal of Applied Physics, 2015-06, Vol.54 (6), p.62102

2015

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High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer

Optics express, 2018-03, Vol.26 (5), p.5111-5117

2018

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Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

Applied physics express, 2019-10, Vol.12 (10), p.102016

2019

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Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.4776

2005

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Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode

IEEE photonics technology letters, 2011-04, Vol.23 (7), p.423-425

2011

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Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

Applied physics letters, 2005-03, Vol.86 (13), p.133503-133503-3

2005

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Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Physica status solidi. A, Applications and materials science, 2007-03, Vol.204 (3), p.881-886

2007

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Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

Scientific reports, 2015-05, Vol.5 (1), p.9717-9717, Article 9717

2015

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Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Applied physics letters, 2007-07, Vol.91 (2), p.023510-023510-3

2007

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Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

Materials science in semiconductor processing, 2015-03, Vol.31, p.153-159

2015

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Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

Visible Light-Emitting Diodes With Thin-Film-Flip- Chip-Based Wafer-Level Chip-Scale Package Technology Using Anisotropic Conductive Film Bonding

Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package

Ohmic and degradation mechanisms of Ag contacts on p -type GaN

Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system

Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents

Cu -doped indium oxide∕Ag ohmic contacts for high-power flip-chip light-emitting diodes

Highly low resistance and transparent Ni/ZnO ohmic contacts to p -type GaN

Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentation

Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes

Formation of low resistance and transparent ohmic contacts to p -type GaN using Ni–Mg solid solution

Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer

High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer

Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering

Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode

Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

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