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A Perspective on Terahertz Next-Generation Wireless Communications

Technologies (Basel), 2019-06, Vol.7 (2), p.43

2019

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Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking

Sensors (Basel, Switzerland), 2023-07, Vol.23 (15), p.6745

2023

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A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.272-275

2018

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A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3-5 GHz UWB Applications

IEEE access, 2024, Vol.12, p.76404-76412

2024

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A SiGe-BiCMOS Wideband (2-22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation

IEEE transactions on microwave theory and techniques, 2016-12, Vol.64 (12), p.4676-4684

2016

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Performance analysis of SiGe-HBT-based transimpedance amplifiers with nonconstant gain-bandwidth technique

Analog integrated circuits and signal processing, 2020-09, Vol.104 (3), p.289-297

2020

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A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair

IEEE microwave and wireless components letters, 2018-08, Vol.28 (8), p.717-719

2018

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Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Sensors (Basel, Switzerland), 2020-05, Vol.20 (9), p.2581

2020

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Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2079-2088

2017

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A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

2012 IEEE International Solid-State Circuits Conference, 2012, p.46-48

2012

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A Compact, Active SiGe Power Divider With Multi-Octave Bandwidth

IEEE microwave and wireless components letters, 2016-11, Vol.26 (11), p.945-947

2016

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A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

IEEE access, 2020, Vol.8, p.2578-2589

2020

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Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.240-247

2019

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Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2779-2784

2008

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An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

IEEE microwave and wireless components letters, 2016-04, Vol.26 (4), p.279-281

2016

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On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

IEEE transactions on nuclear science, 2017-05, Vol.64 (5), p.1142-1150

2017

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Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3218-3225

2014

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Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2915-2922

2014

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An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

IEEE transactions on nuclear science, 2016-02, Vol.63 (1), p.273-280

2016

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The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.359-366

2017

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An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers

IEEE transactions on nuclear science, 2016-04, Vol.63 (2), p.1099-1108

2016

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Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2657-2665

2015

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Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.3057-3063

2015

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Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3050-3054

2014

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The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2599-2605

2015

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A Perspective on Terahertz Next-Generation Wireless Communications

Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking

A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas

A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3-5 GHz UWB Applications

A SiGe-BiCMOS Wideband (2-22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation

Performance analysis of SiGe-HBT-based transimpedance amplifiers with nonconstant gain-bandwidth technique

A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

A Compact, Active SiGe Power Divider With Multi-Octave Bandwidth

A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients

An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers

Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation

Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits

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