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Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Advanced materials (Weinheim), 2008-02, Vol.20 (4), p.801-804

2008

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Design of stationary computed tomography baggage scanner with π-angle sparsity and compressed-sensing reconstruction: simulation study

Journal of instrumentation, 2023-01, Vol.18 (1), p.C01058

2023

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Comparison of Three Methods for Estimating Leaf Area Index of Upland Rice Cultivars

Crop science, 2009-07, Vol.49 (4), p.1438-1443

2009

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Characterizing Submergence Survival Strategy in Rice Via Chlorophyll Fluorescence

Journal of agronomy and crop science (1986), 2012-04, Vol.198 (2), p.152-160

2012

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Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Applied physics letters, 2006-03, Vol.88 (10), p.103505-103505-3

2006

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Thermo-responsive polymer nanoparticles with a core-shell micelle structure as site-specific drug carriers

Journal of controlled release, 1997-10, Vol.48 (2), p.157-164

1997

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Traits associated with the escape strategy are responsible for flash flooding tolerance of rice during the emergence and seedling stages

Cereal research communications, 2015-09, Vol.43 (3), p.525-536

2015

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Analysis of high-power packages for phosphor-based white-light-emitting diodes

Applied physics letters, 2005-06, Vol.86 (24), p.243505-243505-3

2005

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Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns

Applied physics letters, 2005-11, Vol.87 (20), p.203508-203508-3

2005

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Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

Applied physics letters, 1999-12, Vol.75 (26), p.4109-4111

1999

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Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

IEEE photonics technology letters, 2007-10, Vol.19 (19), p.1562-1564

2007

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Influence of Electron Tunneling Barriers on the Performance of InGaN-GaN Ultraviolet Light-Emitting Diodes

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2663-2667

2004

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Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Semiconductor science and technology, 2006-05, Vol.21 (5), p.594-597

2006

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In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-based Light-emitting Diodes

Journal of the Korean Physical Society, 2009, 55(1), , pp.318-321

2009

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Erratum: Design of stationary computed tomography baggage scanner with π-angle sparsity and compressed-sensing reconstruction: simulation study

Journal of instrumentation, 2024-07, Vol.19 (7), p.E07003

2024

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GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

Applied physics letters, 2006-01, Vol.88 (1)

2006

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Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes

Journal of nanoscience and nanotechnology, 2006-11, Vol.6 (11), p.3547

2006

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High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

IEEE photonics technology letters, 2007-03, Vol.19 (5), p.336-338

2007

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IEEE_Xplore

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Applied physics letters, 2000-03, Vol.76 (12), p.1489-1491

2000

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InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling

Applied physics letters, 2009-12, Vol.95 (23), p.231917-231917-3

2009

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The Role of an Overlayer in the Formation of Ni-based Transparent Ohmic Contacts to p-GaN

Japanese Journal of Applied Physics, 2001-11, Vol.40 (11R), p.6221-6225

2001

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High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Applied physics letters, 2009-07, Vol.95 (1), p.011108-011108-3

2009

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Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Physica status solidi. A, Applications and materials science, 2005-07, Vol.202 (9), p.1869-1873

2005

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Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Solid state communications, 2000-11, Vol.116 (12), p.675-678

2000

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Light output enhancement of GaN-based flip-chip light-emitting diodes fabricated with SiO2/TiO2 distributed Bragg reflector coated on mesa sidewall

Journal of applied physics, 2010-09, Vol.108 (6)

2010

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Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Design of stationary computed tomography baggage scanner with π-angle sparsity and compressed-sensing reconstruction: simulation study

Comparison of Three Methods for Estimating Leaf Area Index of Upland Rice Cultivars

Characterizing Submergence Survival Strategy in Rice Via Chlorophyll Fluorescence

Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Thermo-responsive polymer nanoparticles with a core-shell micelle structure as site-specific drug carriers

Traits associated with the escape strategy are responsible for flash flooding tolerance of rice during the emergence and seedling stages

Analysis of high-power packages for phosphor-based white-light-emitting diodes

Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns

Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

Influence of Electron Tunneling Barriers on the Performance of InGaN-GaN Ultraviolet Light-Emitting Diodes

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-based Light-emitting Diodes

Erratum: Design of stationary computed tomography baggage scanner with π-angle sparsity and compressed-sensing reconstruction: simulation study

GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes

High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling

The Role of an Overlayer in the Formation of Ni-based Transparent Ohmic Contacts to p-GaN

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Light output enhancement of GaN-based flip-chip light-emitting diodes fabricated with SiO2/TiO2 distributed Bragg reflector coated on mesa sidewall

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