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Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

Applied physics letters, 2016-11, Vol.109 (20)

2016

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Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films

Nature materials, 2016-07, Vol.15 (10), p.1113-1119

2016

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Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

Nature communications, 2020-03, Vol.11 (1), p.1401-1401, Article 1401

2020

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Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Scientific reports, 2017-07, Vol.7 (1), p.1-9, Article 4681

2017

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Correlated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Gate‐Induced Massive and Reversible Phase Transition of VO2 Channels Using Solid‐State Proton Electrolytes

Advanced functional materials, 2018-09, Vol.28 (39), p.n/a

2018

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Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

NPG Asia materials, 2018-04, Vol.10 (4), p.363-371

2018

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Perovskite Stannate Heterojunctions for Self‐Powered Ultraviolet Photodiodes Operated in Extreme Environments

Advanced electronic materials, 2024-05, Vol.10 (5), p.n/a

2024

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Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films

Applied physics letters, 2010-02, Vol.96 (6)

2010

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Interference-Compensating Magnetometer Calibration With Estimated Measurement Noise Covariance for Application to Small-Sized UAVs

IEEE transactions on industrial electronics (1982), 2020-10, Vol.67 (10), p.8829-8840

2020

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Revealing the three-dimensional arrangement of polar topology in nanoparticles

Nature communications, 2024-05, Vol.15 (1), p.3887-3887, Article 3887

2024

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Electrodeless method for ultra-low mobility with carrier-resolution of nanochannel

Journal of applied physics, 2023-11, Vol.134 (20)

2023

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Nanoscale quantification of octahedral tilts in perovskite films

Applied physics letters, 2012-05, Vol.100 (19), p.191909-191909-3

2012

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Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches

Nature communications, 2022-08, Vol.13 (1), p.4609-4609, Article 4609

2022

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Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films

ACS applied materials & interfaces, 2018-02, Vol.10 (5), p.4831-4837

2018

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Fixed charge in high- k /GaN metal-oxide-semiconductor capacitor structures

Applied physics letters, 2012-09, Vol.101 (10), p.102905

2012

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Structural origins of the properties of rare earth nickelate superlattices

Physical review. B, Condensed matter and materials physics, 2013-02, Vol.87 (6), Article 060101

2013

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Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films

Nanoscale, 2018-07, Vol.10 (27), p.13261-13269

2018

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Direct Probing of Oxygen Loss from the Surface Lattice of Correlated Oxides during Hydrogen Spillover

The journal of physical chemistry letters, 2019-11, Vol.10 (22), p.7285-7292

2019

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Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO2 transistor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (7), p.2521-2529

2021

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A heterojunction modulation-doped Mott transistor

Journal of applied physics, 2011-10, Vol.110 (8), p.084503-084503-4

2011

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Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor

Advanced electronic materials, 2021-02, Vol.7 (2), p.n/a

2021

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Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells

Nature catalysis, 2020-08, Vol.3 (8), p.639-648

2020

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In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-03, Vol.33 (2)

2015

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Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects

Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films

Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Correlated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration

Gate‐Induced Massive and Reversible Phase Transition of VO2 Channels Using Solid‐State Proton Electrolytes

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Perovskite Stannate Heterojunctions for Self‐Powered Ultraviolet Photodiodes Operated in Extreme Environments

Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films

Interference-Compensating Magnetometer Calibration With Estimated Measurement Noise Covariance for Application to Small-Sized UAVs

Revealing the three-dimensional arrangement of polar topology in nanoparticles

Electrodeless method for ultra-low mobility with carrier-resolution of nanochannel

Nanoscale quantification of octahedral tilts in perovskite films

Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches

Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films

Fixed charge in high- k /GaN metal-oxide-semiconductor capacitor structures

Structural origins of the properties of rare earth nickelate superlattices

Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films

Direct Probing of Oxygen Loss from the Surface Lattice of Correlated Oxides during Hydrogen Spillover

Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO2 transistor

A heterojunction modulation-doped Mott transistor

Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor

Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

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