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Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.816-821

2020

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Simplified V/f Control Algorithm for Reduction of Current Fluctuations in Variable-Speed Operation of Induction Motors

Energies (Basel), 2024-04, Vol.17 (7), p.1699

2024

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AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

IEEE electron device letters, 2015-10, Vol.36 (10), p.1008-1010

2015

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High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Sensors (Basel, Switzerland), 2018-04, Vol.18 (5), p.1314

2018

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Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1699-1703

2019

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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1547-1552

2020

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Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I - V Characteristic for Switching Applications

IEEE electron device letters, 2016-07, Vol.37 (7), p.855-858

2016

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Effects of MMF Harmonics on Rotor Eddy-Current Losses for Inner-Rotor Fractional Slot Axial Flux Permanent Magnet Synchronous Machines

IEEE transactions on magnetics, 2012-02, Vol.48 (2), p.839-842

2012

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Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Microelectronic engineering, 2015-11, Vol.147, p.155-158

2015

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AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Sensors and actuators. B, Chemical, 2018-05, Vol.260, p.134-139

2018

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First demonstration of GaN-based vertical nanowire FET with top-down approach

2015 73rd Annual Device Research Conference (DRC), 2015, p.35-36

2015

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Low voltage operation of GaN vertical nanowire MOSFET

Solid-state electronics, 2018-07, Vol.145, p.1-7

2018

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AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Sensors (Basel, Switzerland), 2015-07, Vol.15 (8), p.18416-18426

2015

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Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

2015 45th European Solid State Device Research Conference (ESSDERC), 2015, p.130-133

2015

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Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Solid-state electronics, 2018-03, Vol.141, p.7-12

2018

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Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer

Journal of crystal growth, 2016-05, Vol.441, p.41-45

2016

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A Novel Analysis of } Dependent-1/ Noise in In0.08Al0.92N/GaN

IEEE electron device letters, 2018-10, Vol.39 (10), p.1552-1555

2018

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1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Microelectronic engineering, 2015-11, Vol.147, p.134-136

2015

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Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

Materials chemistry and physics, 2014-01, Vol.143 (2), p.801-805

2014

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First demonstration of heterojunction-free GaN nanochannel FinFETs

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.415-418

2013

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Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel

Solid-state electronics, 2013-11, Vol.89, p.124-127

2013

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Fabrication and characterization of GaN-based nanostructure field effect transistors

Solid-state electronics, 2021-10, Vol.184, p.108079, Article 108079

2021

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Differential-mode HEMT-based biosensor for real-time and label-free detection of C-reactive protein

Sensors and actuators. B, Chemical, 2016-10, Vol.234, p.316-323

2016

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Control of transconductance in high performance AlGaN/GaN FinFETs

2015 IEEE 11th International Conference on Power Electronics and Drive Systems, 2015, p.684-686

2015

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A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In 0.08 Al 0.92 N/GaN

IEEE electron device letters, 2018-10, Vol.39 (10), p.1552-1555

2018

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Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET

Simplified V/f Control Algorithm for Reduction of Current Fluctuations in Variable-Speed Operation of Induction Motors

AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I - V Characteristic for Switching Applications

Effects of MMF Harmonics on Rotor Eddy-Current Losses for Inner-Rotor Fractional Slot Axial Flux Permanent Magnet Synchronous Machines

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

AlGaN/GaN heterostructure pH sensor with multi-sensing segments

First demonstration of GaN-based vertical nanowire FET with top-down approach

Low voltage operation of GaN vertical nanowire MOSFET

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer

A Novel Analysis of } Dependent-1/ Noise in In0.08Al0.92N/GaN

1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

First demonstration of heterojunction-free GaN nanochannel FinFETs

Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel

Fabrication and characterization of GaN-based nanostructure field effect transistors

Differential-mode HEMT-based biosensor for real-time and label-free detection of C-reactive protein

Control of transconductance in high performance AlGaN/GaN FinFETs

A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In 0.08 Al 0.92 N/GaN

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