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Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4864-4869

2022

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Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

AIP advances, 2021-12, Vol.11 (12), p.125316-125316-10

2021

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Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE journal of the Electron Devices Society, 2017-05, Vol.5 (3), p.175-181

2017

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Estimation of Zero-Field Activation Energy for Traps in Fe-and C-Doped GaN-Based HEMTs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-7

2024

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Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15- \mu m Ultrashort Gate Length

IEEE transactions on microwave theory and techniques, 2019-07, Vol.67 (7), p.2475-2482

2019

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HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2023-05, Vol.71 (5), p.1957-1966

2023

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Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Semiconductor science and technology, 2024-06, Vol.39 (6), p.65016

2024

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Understanding the Thermal Time Constants of GaN HEMTs through Model Order Reduction Technique

Electronics (Basel), 2021-12, Vol.10 (24), p.3138

2021

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Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1921-1927

2012

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Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance (RTH) for AlGaN/GaN HEMT

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6552-6559

2024

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An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

IEEE microwave and wireless components letters, 2007-03, Vol.17 (3), p.211-213

2007

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Behavioral Thermal Modeling for Microwave Power Amplifier Design

IEEE transactions on microwave theory and techniques, 2007-11, Vol.55 (11), p.2290-2297

2007

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Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electronics (Basel), 2021-12, Vol.10 (24), p.3096

2021

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Electrical Measurement of the Thermal Impedance of Bipolar Transistors

IEEE electron device letters, 2010-09, Vol.31 (9), p.939-941

2010

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Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier

2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2024, p.1-6

2024

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GaN HEMTs thermal time constants: Theory and Measurements

2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2022, p.1-5

2022

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Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

International journal of microwave and wireless technologies, 2012-12, Vol.4 (6), p.569-578

2012

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2D Materials for Raman Thermal Measurements on Power Electronics Devices

2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2024, p.1-7

2024

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Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs

2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), 2020, p.1-3

2020

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Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-[Formula Omitted]m Ultrashort Gate Length

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (7), p.2475

2019

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Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers

2021 16th European Microwave Integrated Circuits Conference (EuMIC), 2022, p.197-200

2022

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Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

IEEE transactions on microwave theory and techniques, 2016-05, Vol.64 (5), p.1351-1358

2016

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Time Domain Drain Lag Measurement and TCAD-based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism

2019 14th European Microwave Integrated Circuits Conference (EuMIC), 2019, p.21-24

2019

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Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods

2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), 2020, p.1-3

2020

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Evaluation of Thermal Impedance by 3omega Method for Power Amplifier Behavioral Modeling

2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), 2020, p.1-3

2020

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Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Estimation of Zero-Field Activation Energy for Traps in Fe-and C-Doped GaN-Based HEMTs

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15- \mu m Ultrashort Gate Length

HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs

Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Understanding the Thermal Time Constants of GaN HEMTs through Model Order Reduction Technique

Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs

Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance (RTH) for AlGaN/GaN HEMT

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

Behavioral Thermal Modeling for Microwave Power Amplifier Design

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electrical Measurement of the Thermal Impedance of Bipolar Transistors

Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier

GaN HEMTs thermal time constants: Theory and Measurements

Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

2D Materials for Raman Thermal Measurements on Power Electronics Devices

Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-[Formula Omitted]m Ultrashort Gate Length

Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

Time Domain Drain Lag Measurement and TCAD-based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism

Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods

Evaluation of Thermal Impedance by 3omega Method for Power Amplifier Behavioral Modeling

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