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Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers

Journal of applied physics, 2019-12, Vol.126 (23)

2019

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Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75010

2024

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Integrated optics spiral photoconductive antennas coupled with 1D and 2D micron-size terahertz-wavelength plasmonic metal arrays

Optical materials express, 2022-04, Vol.12 (4), p.1617

2022

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Spintronic terahertz emission from Ni/Pt bilayer grown on MgO

Journal of physics. Conference series, 2021-07, Vol.1943 (1), p.12035

2021

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Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields

Applied surface science, 2014-06, Vol.303, p.241-244

2014

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Growth and fabrication of 850 nm AlGaAs/GaAs vertical cavity surface emitting laser structure

Journal of physics. Conference series, 2019-05, Vol.1217 (1), p.12003

2019

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Role of excited nitrogen species in the growth of GaN by RF–MBE

Journal of crystal growth, 2006-07, Vol.292 (2), p.221-226

2006

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Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off

physica status solidi (b), 2013-08, Vol.250 (8), p.1632-1635

2013

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Terahertz emission and photoluminescence of silicon nanowires electrolessly etched on the surface of silicon (100), (110), and (111) substrates for photovoltaic cell applications

Photonics and nanostructures, 2017-05, Vol.24, p.1-6

2017

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Application of external tensile and compressive strain on a single layer In A s/ G a A s quantum dot via epitaxial lift‐off

Physica Status Solidi. B: Basic Solid State Physics, 2013-08, Vol.250 (8), p.1632-1635

2013

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Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Journal of crystal growth, 2003-04, Vol.251 (1), p.196-200

2003

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Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

Journal of applied physics, 2002-03, Vol.91 (6), p.3717-3720

2002

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Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

Journal of applied physics, 2004-07, Vol.96 (2), p.1267-1269

2004

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Time response characteristics of an oxide-confined GaAs∕AlGaAs resonant cavity-enhanced photodetector

Applied physics letters, 2004-10, Vol.85 (15), p.3011-3013

2004

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Terahertz Emission Enhancement of Gallium-Arsenide-Based Photoconductive Antennas with AAO-Patterned Gold Nanoparticles

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2023, p.1-2

2023

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Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template

Physica status solidi. C, 2006-06, Vol.3 (6), p.1404-1407

2006

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Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure

Physica status solidi. C, 2006-06, Vol.3 (6), p.1383-1387

2006

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Interband dot-to-well transitions in InAs∕InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy

Applied physics letters, 2008-05, Vol.92 (20)

2008

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Interband dot-to-well transitions in In As ∕ In Ga As dots in a well probed via photocurrent and electroluminescence spectroscopy

Applied physics letters, 2008-05, Vol.92 (20), p.201110-201110-3

2008

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Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

Applied physics. B, Lasers and optics, 2011-06, Vol.103 (4), p.825-829

2011

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17pB10 BP/Si(001)上への立方晶GaNRF-MBE成長(半導体エピ(4),第35回結晶成長国内会議)

日本結晶成長学会誌, 2005/08/17, Vol.32(3), pp.149

2005

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Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates

2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology, 2011, p.458-460

2011

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Terahertz emission from indium oxide films on MgO substrates excited at a photon energy below the bandgap

2011

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Tunneling at room temperature in GaAs/AlGaAs asymmetric coupled double quantum wells observed via time resolved photoluminescence spectroscopy

Superlattices and microstructures, 2017-09, Vol.109, p.324-329

2017

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17pB01 RF-MBE grown GaN with monitoring and controlling of in-situ activated atomic nitrogen flux(NCCG-35)

Journal of the Japanese Association for Crystal Growth, 2005/08/17, Vol.32(3), pp.140

2005

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Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers

Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies

Integrated optics spiral photoconductive antennas coupled with 1D and 2D micron-size terahertz-wavelength plasmonic metal arrays

Spintronic terahertz emission from Ni/Pt bilayer grown on MgO

Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields

Growth and fabrication of 850 nm AlGaAs/GaAs vertical cavity surface emitting laser structure

Role of excited nitrogen species in the growth of GaN by RF–MBE

Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off

Terahertz emission and photoluminescence of silicon nanowires electrolessly etched on the surface of silicon (100), (110), and (111) substrates for photovoltaic cell applications

Application of external tensile and compressive strain on a single layer In A s/ G a A s quantum dot via epitaxial lift‐off

Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

Time response characteristics of an oxide-confined GaAs∕AlGaAs resonant cavity-enhanced photodetector

Terahertz Emission Enhancement of Gallium-Arsenide-Based Photoconductive Antennas with AAO-Patterned Gold Nanoparticles

Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template

Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure

Interband dot-to-well transitions in InAs∕InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy

Interband dot-to-well transitions in In As ∕ In Ga As dots in a well probed via photocurrent and electroluminescence spectroscopy

Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

17pB10 BP/Si(001)上への立方晶GaNRF-MBE成長(半導体エピ(4),第35回結晶成長国内会議)

Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates

Terahertz emission from indium oxide films on MgO substrates excited at a photon energy below the bandgap

Tunneling at room temperature in GaAs/AlGaAs asymmetric coupled double quantum wells observed via time resolved photoluminescence spectroscopy

17pB01 RF-MBE grown GaN with monitoring and controlling of in-situ activated atomic nitrogen flux(NCCG-35)

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