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Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Applied physics letters, 2023-08, Vol.123 (6)

2023

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Single Chip Gas Sensor Array for Air Quality Monitoring

Journal of microelectromechanical systems, 2017-04, Vol.26 (2), p.433-439

2017

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Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Advanced functional materials, 2022-11, Vol.32 (47), p.n/a

2022

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Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

Journal of applied physics, 2015-10, Vol.118 (13)

2015

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Demonstration of N-Polar All-AlGaN High Electron Mobility Transistors With 375 mA/mm Drive Current

IEEE electron device letters, 2023-07, Vol.44 (7), p.1072-1075

2023

Volltextzugriff (PDF)

Vertical Ga 2 O 3 MOSFET With Magnesium Diffused Current Blocking Layer

IEEE electron device letters, 2022-09, Vol.43 (9), p.1527-1530

2022

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Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer

IEEE electron device letters, 2022-09, Vol.43 (9), p.1527-1530

2022

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A study on MOCVD growth window for high quality N-polar GaN for vertical device applications

Semiconductor science and technology, 2022-09, Vol.37 (9), p.95003

2022

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Scaling Study on High-Current Density Low-Dispersion GaN Vertical FinFETs

IEEE electron device letters, 2023-05, Vol.44 (5), p.1-1

2023

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An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate

Semiconductor science and technology, 2019-12, Vol.34 (12), p.125011

2019

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A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75018

2022

Volltextzugriff (PDF)

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Sensors and actuators. A. Physical., 2021-01, Vol.317, p.112455, Article 112455

2021

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Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6650-6655

2022

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A Performance Comparison Between \beta -Ga2O3 and GaN HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3310-3317

2019

Volltextzugriff (PDF)

Impact of Diamond Passivation on f T and f max of mm-wave N-Polar GaN HEMTs

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6650-6655

2022

Volltextzugriff (PDF)

Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN

Nanotechnology, 2022-12, Vol.33 (50), p.505704

2022

Volltextzugriff (PDF)

Development of 300–400 °C grown diamond for semiconductor devices thermal management

MRS advances, 2024-02, Vol.9 (1), p.7-11

2024

Volltextzugriff (PDF)

Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates

Journal of applied physics, 2018-12, Vol.124 (24)

2018

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A Performance Comparison Between $\beta$ -Ga 2 O 3 and GaN HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3310-3317

2019

Volltextzugriff (PDF)

A Performance Comparison Between [Formula Omitted]-Ga2O3 and GaN HEMTs

IEEE transactions on electron devices, 2019-01, Vol.66 (8), p.3310

2019

Volltextzugriff (PDF)

Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer

Semiconductor science and technology, 2018-08, Vol.33 (9), p.95006

2018

Volltextzugriff (PDF)

Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN

Nanotechnology, 2022-10, Vol.33 (50)

2022

Volltextzugriff (PDF)

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Advanced electronic materials, 2024-07

2024

Volltextzugriff (PDF)

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

Technical review - IETE, 2016-01, Vol.33 (1), p.82-87

2016

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Cooling future system-on-chips with diamond inter-tiers

Cell reports physical science, 2023-12, Vol.4 (12), p.101686, Article 101686

2023

Volltextzugriff (PDF)

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Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Single Chip Gas Sensor Array for Air Quality Monitoring

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

Demonstration of N-Polar All-AlGaN High Electron Mobility Transistors With 375 mA/mm Drive Current

Vertical Ga 2 O 3 MOSFET With Magnesium Diffused Current Blocking Layer

Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer

A study on MOCVD growth window for high quality N-polar GaN for vertical device applications

Scaling Study on High-Current Density Low-Dispersion GaN Vertical FinFETs

An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate

A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs

A Performance Comparison Between \beta -Ga2O3 and GaN HEMTs

Impact of Diamond Passivation on f T and f max of mm-wave N-Polar GaN HEMTs

Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN

Development of 300–400 °C grown diamond for semiconductor devices thermal management

Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates

A Performance Comparison Between $\beta$ -Ga 2 O 3 and GaN HEMTs

A Performance Comparison Between [Formula Omitted]-Ga2O3 and GaN HEMTs

Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer

Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

Cooling future system-on-chips with diamond inter-tiers

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