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Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

Nature communications, 2019-04, Vol.10 (1), p.1678-1678, Article 1678

2019

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All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

Physical review. X, 2016-07, Vol.6 (3), p.031014, Article 031014

2016

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Optical thermometry based on level anticrossing in silicon carbide

Scientific reports, 2016-09, Vol.6 (1), p.33301-33301, Article 33301

2016

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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review

physica status solidi (b), 2018-01, Vol.255 (1), p.n/a

2018

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Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Scientific reports, 2013-04, Vol.3 (1), p.1637-1637, Article 1637

2013

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Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Journal of applied physics, 2014-04, Vol.115 (13)

2014

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Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure

Physical review letters, 2015-12, Vol.115 (24), p.247602-247602, Article 247602

2015

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Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Applied physics letters, 2014-12, Vol.105 (24)

2014

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High-Temperature Diffusion of the Acceptor Impurity Be in AlN

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.401-404

2023

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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)

physica status solidi (b), 2018-01, Vol.255 (1)

2018

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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Scientific reports, 2014-07, Vol.4 (1), p.5303-5303, Article 5303

2014

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Room-Temperature Level Anticrossing and Cross-Relaxation Spectroscopy of Spin Color Centers in SiC Single Crystals and Nanostructures

Applied magnetic resonance, 2018-01, Vol.49 (1), p.85-95

2018

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Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Nature physics, 2014-02, Vol.10 (2), p.157-162

2014

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Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Nature physics, 2013-12, Vol.10 (2), p.157-162

2013

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14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study

Journal of applied physics, 2023-09, Vol.134 (12)

2023

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Spin Alignment of NV− Centers in 4H- and 6H-SiC Crystals Induced by IR and Visible Optical Excitation

Applied magnetic resonance, 2024-09, Vol.55 (9), p.1175-1182

2024

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Room Temperature High-Field Spin Dynamics of NV Defects in Sintered Diamonds

Applied magnetic resonance, 2013-10, Vol.44 (10), p.1235-1244

2013

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Properties of AlN single crystals doped with Beryllium via high temperature diffusion

Applied physics letters, 2018-08, Vol.113 (8)

2018

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High-Temperature Spin Manipulation on Color Centers in Rhombic Silicon Carbide Polytype 21R-SiC

JETP letters, 2020-12, Vol.112 (12), p.774-779

2020

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Probing Wave Functions of Electrically Active Shallow Level Defects by Means of High-Frequency Pulsed ENDOR in Wide Bandgap Materials: SiC, AlN, ZnO, and AgCl

Applied magnetic resonance, 2022-05, Vol.53 (3-5), p.821-853

2022

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Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation

Physics of the solid state, 2022-04, Vol.64 (4), p.210-214

2022

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EPR and ODMR defect control in AlN bulk crystals

Physica status solidi. C, 2013-03, Vol.10 (3), p.449-452

2013

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Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide

Physics Uspekhi, 2016-01, Vol.59 (6), p.605-610

2016

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Hyperfine and nuclear quadrupole splitting of the NV− ground state in 4H -SiC

Physical review. B, 2021-06, Vol.103 (24)

2021

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Physical Foundations of an Application of Scanning Probe with Spin Centers in SiC for the Submicron Quantum Probing of Magnetic Fields and Temperatures

JETP letters, 2018-11, Vol.108 (9), p.610-615

2018

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Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

Optical thermometry based on level anticrossing in silicon carbide

Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review

Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

High-Temperature Diffusion of the Acceptor Impurity Be in AlN

Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Room-Temperature Level Anticrossing and Cross-Relaxation Spectroscopy of Spin Color Centers in SiC Single Crystals and Nanostructures

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study

Spin Alignment of NV− Centers in 4H- and 6H-SiC Crystals Induced by IR and Visible Optical Excitation

Room Temperature High-Field Spin Dynamics of NV Defects in Sintered Diamonds

Properties of AlN single crystals doped with Beryllium via high temperature diffusion

High-Temperature Spin Manipulation on Color Centers in Rhombic Silicon Carbide Polytype 21R-SiC

Probing Wave Functions of Electrically Active Shallow Level Defects by Means of High-Frequency Pulsed ENDOR in Wide Bandgap Materials: SiC, AlN, ZnO, and AgCl

Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation

EPR and ODMR defect control in AlN bulk crystals

Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide

Hyperfine and nuclear quadrupole splitting of the NV− ground state in 4H -SiC

Physical Foundations of an Application of Scanning Probe with Spin Centers in SiC for the Submicron Quantum Probing of Magnetic Fields and Temperatures

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