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Effect of non-uniform carrier injection on two-state lasing in quantum dot microdisks with split electrical contact

Journal of physics. D, Applied physics, 2024-07, Vol.57 (28), p.285104

2024

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The influence of temperature and arsenic molecular form at crystallization stage on the InAs nanostructure growth during droplet epitaxy

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12003

2021

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Kinetic Monte Carlo simulation of the indium droplet epitaxy on the Ga-terminated GaAs(001) surface

Journal of physics. Conference series, 2017-11, Vol.917 (3), p.32033

2017

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Effect of the Al content in the substrate on the In nanodroplets growth by droplet epitaxy

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12012

2020

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Effect of morphology features of patterned surface on the nucleation processes of In/GaAs nanostructures during droplet epitaxy

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12007

2019

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Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12017

2021

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Study of In/GaAs nanodroplet formation in conditions of non-stationary supersaturation during droplet epitaxy

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12005

2021

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Study of the initial stage of GaAs growth on FIB-modified silicon substrates

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12007

2021

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Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Journal of physics. Conference series, 2018-12, Vol.1124 (4), p.41024

2018

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Study of the geometrical parameters of In nanostructures during droplet epitaxy on the As-stabilized GaAs(001) surface

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22025

2018

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Kinetic Monte Carlo simulation of the growth of In nanostructures by droplet epitaxy on AlGaAs nanopatterned surfaces

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12016

2020

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Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22018

2018

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GaAs epitaxial growth on modified on-axis Si(001) substrates

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12013

2020

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Arsenic background pressure effect on In droplet morphology

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12051

2019

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XPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12045

2019

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Effect of wet chemical treatment on the properties of GaAs FIB-modified surface

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12036

2021

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Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12027

2021

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Role of the wetting layer in the crystallization stage during droplet epitaxy of InAs/GaAs nanostructures

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12059

2019

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Analytical-Monte Carlo model of the growth of In nanostructures during droplet epitaxy on the triangle-patterned GaAs substrates

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22001

2018

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Influence of two-stage growth during the formation of GaAs/Si heterostructures for the creation of optoelectronic devices

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12030

2019

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Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12036

2019

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The study of influence of the gas flow rate to etched layer thickness, and roughness of the anisotropy field of gallium arsenide is etched in the plasma chemical etching process

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12178

2016

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Monte Carlo investigation of the MBE growth of GaAs on the surfaces with different crystallographic orientations

Journal of physics. Conference series, 2017-11, Vol.917 (3), p.32034

2017

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Monte Carlo simulation of V III flux ratio influence on GaAs island nucleation during MBE

Journal of physics. Conference series, 2016-02, Vol.681 (1), p.12036

2016

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Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12012

2016

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Effect of non-uniform carrier injection on two-state lasing in quantum dot microdisks with split electrical contact

The influence of temperature and arsenic molecular form at crystallization stage on the InAs nanostructure growth during droplet epitaxy

Kinetic Monte Carlo simulation of the indium droplet epitaxy on the Ga-terminated GaAs(001) surface

Effect of the Al content in the substrate on the In nanodroplets growth by droplet epitaxy

Effect of morphology features of patterned surface on the nucleation processes of In/GaAs nanostructures during droplet epitaxy

Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy

Study of In/GaAs nanodroplet formation in conditions of non-stationary supersaturation during droplet epitaxy

Study of the initial stage of GaAs growth on FIB-modified silicon substrates

Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Study of the geometrical parameters of In nanostructures during droplet epitaxy on the As-stabilized GaAs(001) surface

Kinetic Monte Carlo simulation of the growth of In nanostructures by droplet epitaxy on AlGaAs nanopatterned surfaces

Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface

GaAs epitaxial growth on modified on-axis Si(001) substrates

Arsenic background pressure effect on In droplet morphology

XPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures

Effect of wet chemical treatment on the properties of GaAs FIB-modified surface

Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

Role of the wetting layer in the crystallization stage during droplet epitaxy of InAs/GaAs nanostructures

Analytical-Monte Carlo model of the growth of In nanostructures during droplet epitaxy on the triangle-patterned GaAs substrates

Influence of two-stage growth during the formation of GaAs/Si heterostructures for the creation of optoelectronic devices

Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

The study of influence of the gas flow rate to etched layer thickness, and roughness of the anisotropy field of gallium arsenide is etched in the plasma chemical etching process

Monte Carlo investigation of the MBE growth of GaAs on the surfaces with different crystallographic orientations

Monte Carlo simulation of V III flux ratio influence on GaAs island nucleation during MBE

Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

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