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Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.961-967

2008

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Phonon scattering enhancement in silicon nanolayers

Journal of materials science, 2013-04, Vol.48 (7), p.2779-2784

2013

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Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Materials science forum, 2010-04, Vol.645-648, p.491-494

2010

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Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2021-2028

2008

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Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs : Silicon carbide devices and technology

IEEE transactions on electron devices, 2008, Vol.55 (8), p.2021-2028

2008

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Passivation by N Implantation of the SiO 2 /SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS proceedings, 2010, Vol.1246, Article 1246-B09-01

2010

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Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS proceedings, 2010-01, Vol.1246 (1)

2010

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Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Materials science forum, 2011, Vol.679-680, p.346-349

2011

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Low temperature oxidation of SiC preamorphized by ion implantation

Journal of applied physics, 2004-06, Vol.95 (11), p.6119-6123

2004

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The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Materials science forum, 2011, Vol.679-680, p.326-329

2011

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Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si

Journal of applied physics, 1998-02, Vol.83 (3), p.1742-1747

Solmi, Sandro

1998

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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Materials science forum, 2009, Vol.600-603, p.699-702

2009

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Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum, 2007, Vol.556-557, p.571-574

2007

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Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Materials science forum, 2009, Vol.615-617, p.533-536

2009

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Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Materials science forum, 2009-01, Vol.615-617, p.761-764

2009

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Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Materials science forum, 2009-01, Vol.615-617, p.687-690

2009

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Electrical activation of B in the presence of boron-interstitials clusters

Applied physics letters, 2001-12, Vol.79 (23), p.3764-3766

2001

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Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials science forum, 2007-01, Vol.556-557, p.639-642

2007

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Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials science forum, 2007-01, Vol.556-557, p.651-654

2007

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Analysis of the Electrical Activation of 12+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum, 2007-01, Vol.556-557, p.571-574

2007

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Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum, 2005-05, Vol.483-485, p.665-668

2005

Volltextzugriff (PDF)

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.246-255

2002

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Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

MRS proceedings, 2006, Vol.911, Article 0911-B11-01

2006

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Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

IEEE transactions on electron devices, 1983-07, Vol.30 (7), p.764-769

1983

Volltextzugriff (PDF)

Effect of chlorine implantation on oxidation enhanced diffusion of phosphorus in silicon

Applied physics letters, 1984-07, Vol.45 (2), p.157-159

1984

Volltextzugriff (PDF)

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Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET

Phonon scattering enhancement in silicon nanolayers

Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs

Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs : Silicon carbide devices and technology

Passivation by N Implantation of the SiO 2 /SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Low temperature oxidation of SiC preamorphized by ion implantation

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Electrical activation of B in the presence of boron-interstitials clusters

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Analysis of the Electrical Activation of 12+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

Effect of chlorine implantation on oxidation enhanced diffusion of phosphorus in silicon

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