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Indomethacin promotes nitric oxide function in the ductus arteriosus in the mouse

British journal of pharmacology, 2008-04, Vol.153 (8), p.1631-1640

2008

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Interactions between NO, CO and an endothelium‐derived hyperpolarizing factor (EDHF) in maintaining patency of the ductus arteriosus in the mouse

British journal of pharmacology, 2007-05, Vol.151 (1), p.54-62

2007

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Physica status solidi: December 16

Görlich

2021

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On the anomalous behavior of the relative amplitude of RTS noise

Solid-state electronics, 1998-06, Vol.42 (6), p.901-905

1998

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Etude de la capacité de stockage maxima dans un dispositif à transfert de charges en volume

Revue de physique appliquée, 1984, Vol.19 (11), p.945-950

1984

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Overview of the impact of downscaling technology on 1∕f noise in p-MOSFETs to 90 nm

IEE proceedings. Circuits, devices, and systems, 2004, Vol.151 (2), p.102

2004

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The stroboscopic phase selective voltage contrast: a fast signal processing for electron beam testing of IC's

Microelectronic engineering, 1992-03, Vol.16 (1), p.475-480

1992

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On the Electrical Properties of Cu^S

December 16, 2021, Vol.8, Number 2, p.653-657

2021

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Numerical simulation of the charge transfer in GaAs BCCDs

Solid-state electronics, 1986-09, Vol.29 (9), p.969-976

1986

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2-D numerical simulation of the charge transfer in GaAs B.C.C.D.'s in the GHz range

Physica B + C, 1985-01, Vol.129 (1), p.568-572

1985

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A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors

Solid-state electronics, 1981-01, Vol.24 (7), p.635-642

1981

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Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

Electronics letters, 1976-01, Vol.12 (2), p.42

1976

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Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K

Solid-state electronics, 1980-01, Vol.23 (4), p.335-343

1980

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Impedance and noise in the channel of a GaAs Schottky-gate field-effect transistor

Solid-state electronics, 1977-07, Vol.20 (7), p.579-581

1977

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Equivalent noise generators in JG FET

Solid-state electronics, 1974, Vol.17 (1), p.11-16

1974

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On the electrical properties of CuxS

Physica status solidi. A, Applied research, 1971-12, Vol.8 (2), p.K93-K96

1971

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Etude du domaine d'existence de la phase α″ du tellurure cuivreux a partir de la conductivite electrique

Materials research bulletin, 1970-09, Vol.5 (9), p.763-767

1970

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Noise of hot carriers in the channel of n silicon junction gate field effect transistors

Solid-state electronics, 1978, Vol.21 (1), p.133-138

1978

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On the charge-handling capacity of epitaxial and ion-implanted GaAs buried channel charge-coupled devices

Revue de physique appliquée, 1986-06, Vol.21 (6), p.349-356

1986

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Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors

Revue de physique appliquée, 1980-01, Vol.15 (5), p.937-940

1980

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Study of the conducting channel of the JG FET application to the noise in saturation range

Physica, 1974-01, Vol.74 (3), p.613-622

1974

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Etude du domaine d'existence de la phase α″ du tellurure cuivreux a partir de la conductivite electrique

Materials research bulletin, 1970, Vol.5 (9), p.763-767

1970

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XQR-30: The ultimate XSHOOTER quasar sample at the reionization epoch

Monthly notices of the Royal Astronomical Society, 2023-05, Vol.523 (1), p.1399-1420

2023

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A modeling approach for Σ-Δ fractional-N frequency synthesizers allowing straightforward noise analysis

IEEE journal of solid-state circuits, 2002-08, Vol.37 (8), p.1028-1038

2002

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On the Electrical Properties of CuxS

December 16, 1971, Vol.8, Number 2, p.653-656

1971

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Indomethacin promotes nitric oxide function in the ductus arteriosus in the mouse

Interactions between NO, CO and an endothelium‐derived hyperpolarizing factor (EDHF) in maintaining patency of the ductus arteriosus in the mouse

Physica status solidi: December 16

On the anomalous behavior of the relative amplitude of RTS noise

Etude de la capacité de stockage maxima dans un dispositif à transfert de charges en volume

Overview of the impact of downscaling technology on 1∕f noise in p-MOSFETs to 90 nm

The stroboscopic phase selective voltage contrast: a fast signal processing for electron beam testing of IC's

On the Electrical Properties of Cu^S

Numerical simulation of the charge transfer in GaAs BCCDs

2-D numerical simulation of the charge transfer in GaAs B.C.C.D.'s in the GHz range

A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors

Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K

Impedance and noise in the channel of a GaAs Schottky-gate field-effect transistor

Equivalent noise generators in JG FET

On the electrical properties of CuxS

Etude du domaine d'existence de la phase α″ du tellurure cuivreux a partir de la conductivite electrique

Noise of hot carriers in the channel of n silicon junction gate field effect transistors

On the charge-handling capacity of epitaxial and ion-implanted GaAs buried channel charge-coupled devices

Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors

Study of the conducting channel of the JG FET application to the noise in saturation range

Etude du domaine d'existence de la phase α″ du tellurure cuivreux a partir de la conductivite electrique

XQR-30: The ultimate XSHOOTER quasar sample at the reionization epoch

A modeling approach for Σ-Δ fractional-N frequency synthesizers allowing straightforward noise analysis

On the Electrical Properties of CuxS

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