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A suggested mechanism for silicon direct bonding from studying hydrophilic and hydrophobic surfaces

Journal of micromechanics and microengineering, 1992-09, Vol.2 (3), p.158-160

1992

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High current gain hybrid lateral bipolar operation of DMOS transistors

IEEE transactions on electron devices, 1995-09, Vol.42 (9), p.1628-1635

1995

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Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon‐on‐Diamond Materials

Journal of the Electrochemical Society, 1996-04, Vol.143 (4), p.1326-1334

1996

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Investigation of Buried Etch Stop Layer in Silicon Made by Nitrogen Implantation

Journal of the Electrochemical Society, 1992-02, Vol.139 (2), p.561-566

Söderbärg, A.

1992

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Spontaneous bonding of hydrophobic silicon surfaces

Applied physics letters, 1993-03, Vol.62 (12), p.1362-1364

1993

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A self-aligned lateral bipolar transistor realized on SIMOX-material

IEEE transactions on electron devices, 1993-12, Vol.40 (12), p.2359-2360

1993

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Electrochemical Etch Stop Obtained by Accumulation of Free Carriers without P‐N Junction

Journal of the Electrochemical Society, 1993-01, Vol.140 (1), p.271-275

1993

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Complementary silicon JFETs using novel ultra-shallow gate junctions

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.101-104

1990

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Continuous ink-jet print head utilizing silicon micromachined nozzles

Sensors and actuators. A. Physical., 1994, Vol.43 (1), p.311-316

1994

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Electrical characterisation of silicon pn-junctions terminated with diamond

Diamond and related materials, 1996-12, Vol.5 (12), p.1457-1461

1996

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The Effects of HF Cleaning Prior to Silicon Wafer Bonding

Journal of the Electrochemical Society, 1995-04, Vol.142 (4), p.1297-1303

1995

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Improved direct bonding of Si and SiO2 surfaces by cleaning in H2SO4:H2O2:HF

Applied physics letters, 1995-07, Vol.67 (5), p.650-652

1995

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Characterization of Spontaneously Bonded Hydrophobic Silicon Surfaces

Journal of the Electrochemical Society, 1994-02, Vol.141 (2), p.562-566

1994

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Evaluation of silicon device processes aimed for silicon-on-diamond material

1995 IEEE International SOI Conference Proceedings, 1995, p.104-105

1995

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Transient measurements of heat distribution in devices fabricated on silicon-on-diamond material

Japanese Journal of Applied Physics, 1995, Vol.34 (9A), p.4706-4714

1995

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A capacitance-voltage measurement method for DMOS transistor channel length extraction

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307), 1999, p.135-140

1999

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Ultrashallow diffused n+p junction using antimony for device applications

Journal of applied physics, 1990-06, Vol.67 (12), p.7413-7416

1990

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Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

Proceedings of International Electron Devices Meeting, 1995, p.975-978

1995

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Silicon IC Technology using Complementary MESFET's

ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.537-539

1987

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Silicon on diamond heat sinks by bonding and etch back

Proceedings of 1993 IEEE International SOI Conference, 1993, p.58-59

1993

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Fabrication of BESOI-materials using implanted nitrogen as an effective etch stop barrier

IEEE SOS/SOI Technology Conference, 1989, p.64-65

Soderbarg, A.

1989

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Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding

Journal of the Electrochemical Society, 1994-10, Vol.141 (10), p.2829-2833

1994

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A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's, 1997, p.45-48

1997

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Silicon-on-diamond MOS-transistors with thermally grown gate oxide

1997 IEEE International SOI Conference Proceedings, 1997, p.30-31

1997

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Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors

Journal of applied physics, 1990-02, Vol.67 (4), p.2148-2152

1990

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A suggested mechanism for silicon direct bonding from studying hydrophilic and hydrophobic surfaces

High current gain hybrid lateral bipolar operation of DMOS transistors

Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon‐on‐Diamond Materials

Investigation of Buried Etch Stop Layer in Silicon Made by Nitrogen Implantation

Spontaneous bonding of hydrophobic silicon surfaces

A self-aligned lateral bipolar transistor realized on SIMOX-material

Electrochemical Etch Stop Obtained by Accumulation of Free Carriers without P‐N Junction

Complementary silicon JFETs using novel ultra-shallow gate junctions

Continuous ink-jet print head utilizing silicon micromachined nozzles

Electrical characterisation of silicon pn-junctions terminated with diamond

The Effects of HF Cleaning Prior to Silicon Wafer Bonding

Improved direct bonding of Si and SiO2 surfaces by cleaning in H2SO4:H2O2:HF

Characterization of Spontaneously Bonded Hydrophobic Silicon Surfaces

Evaluation of silicon device processes aimed for silicon-on-diamond material

Transient measurements of heat distribution in devices fabricated on silicon-on-diamond material

A capacitance-voltage measurement method for DMOS transistor channel length extraction

Ultrashallow diffused n+p junction using antimony for device applications

Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

Silicon IC Technology using Complementary MESFET's

Silicon on diamond heat sinks by bonding and etch back

Fabrication of BESOI-materials using implanted nitrogen as an effective etch stop barrier

Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding

A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology

Silicon-on-diamond MOS-transistors with thermally grown gate oxide

Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors

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