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Extraction of Sheet Resistance and Line Width From All-Copper ECD Test Structures Fabricated From Silicon Preforms

IEEE transactions on semiconductor manufacturing, 2008-11, Vol.21 (4), p.495-503

2008

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The switching mechanism in amorphous silicon junctions

Journal of non-crystalline solids, 1985-12, Vol.77, p.1373-1382

1985

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Temporal aggregation and the power of tests for a unit root

Journal of econometrics, 1995-02, Vol.65 (2), p.333-345

1995

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Field-induced anomalous changes in Cr/a-Si:H/V thin film structures

Thin solid films, 2001-09, Vol.396 (1), p.242-251

2001

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AC characteristics of Cr/p/sup +/a-Si:H/V analog switching devices

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1751-1757

2000

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AC characteristics of Cr/p+a-Si:H/V analog switching devices

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1751

2000

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DC and ac measurements on metal/a-Si:H/metal room temperature quantised resistance devices

Journal of non-crystalline solids, 2000-05, Vol.266, p.1058-1061

2000

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Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test Structures Fabricated from Silicon Preforms

2007 IEEE International Conference on Microelectronic Test Structures, 2007, p.14-19

2007

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Constant current forming in Cr/ p+a-Si:H/V thin film devices

Journal of non-crystalline solids, 1998-01, Vol.227, p.1187-1191

1998

Volltextzugriff (PDF)

Array Based Test Structure for Optical-Electrical Overlay Calibration

2007 IEEE International Conference on Microelectronic Test Structures, 2007, p.165-170

2007

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Phase Transition in Cr/a-Si:H/V Thin Film Devices

MRS proceedings, 2000, Vol.609, Article A12.10

2000

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Design and fabrication of a copper test structure for use as an electrical critical dimension reference

2006 IEEE International Conference on Microelectronic Test Structures, 2006, p.124-129

2006

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Theory of room temperature quantized resistance effects in metal-a-Si:H-metal thin film structures

Journal of non-crystalline solids, 1996-05, Vol.198, p.825-828

1996

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Critical behavior of the dielectric properties near the metal-non-metal transition in Cr/p + a-Si:H/V thin film devices

Journal of non-crystalline solids, 1996-05, Vol.198, p.1217-1220

1996

Volltextzugriff (PDF)

Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures

Applied surface science, 1996-02, Vol.92 (1-4), p.579-584

1996

Volltextzugriff (PDF)

Policy evaluation and design in the light of rational expectations

Snell, A.J

1984

Volltextzugriff (PDF)

Use of a-Si:H memory devices for non-volatile weight storage in artificial neural networks

Journal of non-crystalline solids, 1993-12, Vol.164-166, p.817-820

1993

Volltextzugriff (PDF)

A nuclear resonance study of molecular re-orientation in solids

Snell, A.J

1975

Volltextzugriff (PDF)

Quantised electron effects in metal/a-Si:H/metal thin film structures

Journal of non-crystalline solids, 1991, Vol.137, p.499-502

1991

Volltextzugriff (PDF)

The application of vanadium-doped SiO 2 to eeprom devices

Applied surface science, 1989, Vol.39 (1), p.368-373

1989

Volltextzugriff (PDF)

A new amorphous silicon reflective sensor optimized for bar-code reading

Sensors and actuators. A. Physical., 1993-05, Vol.36 (3), p.173-176

1993

Volltextzugriff (PDF)

Amorphous silicon analogue memory devices

Journal of non-crystalline solids, 1989-12, Vol.115 (1), p.168-170

1989

Volltextzugriff (PDF)

DC and AC measurements on metal/a-Si:H/metal thin film devices

Journal of non-crystalline solids, 1993-12, Vol.164-166, p.821-824

1993

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Analogue memory effects in metal/a-Si:H/Metal memory devices

Journal of non-crystalline solids, 1991, Vol.137, p.1257-1262

1991

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Aspects of Non-Volatility in a-Si:H Memory Devices

MRS proceedings, 1992, Vol.258, Article 1075

1992

Volltextzugriff (PDF)

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Extraction of Sheet Resistance and Line Width From All-Copper ECD Test Structures Fabricated From Silicon Preforms

The switching mechanism in amorphous silicon junctions

Temporal aggregation and the power of tests for a unit root

Field-induced anomalous changes in Cr/a-Si:H/V thin film structures

AC characteristics of Cr/p/sup +/a-Si:H/V analog switching devices

AC characteristics of Cr/p+a-Si:H/V analog switching devices

DC and ac measurements on metal/a-Si:H/metal room temperature quantised resistance devices

Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test Structures Fabricated from Silicon Preforms

Constant current forming in Cr/ p+a-Si:H/V thin film devices

Array Based Test Structure for Optical-Electrical Overlay Calibration

Phase Transition in Cr/a-Si:H/V Thin Film Devices

Design and fabrication of a copper test structure for use as an electrical critical dimension reference

Theory of room temperature quantized resistance effects in metal-a-Si:H-metal thin film structures

Critical behavior of the dielectric properties near the metal-non-metal transition in Cr/p + a-Si:H/V thin film devices

Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures

Policy evaluation and design in the light of rational expectations

Use of a-Si:H memory devices for non-volatile weight storage in artificial neural networks

A nuclear resonance study of molecular re-orientation in solids

Quantised electron effects in metal/a-Si:H/metal thin film structures

The application of vanadium-doped SiO 2 to eeprom devices

A new amorphous silicon reflective sensor optimized for bar-code reading

Amorphous silicon analogue memory devices

DC and AC measurements on metal/a-Si:H/metal thin film devices

Analogue memory effects in metal/a-Si:H/Metal memory devices

Aspects of Non-Volatility in a-Si:H Memory Devices

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